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Numéro de référence | RN1109 | ||
Description | Switching/ Inverter Circuit/ Interface Circuit And Driver Circuit Applications | ||
Fabricant | Toshiba Semiconductor | ||
Logo | |||
1 Page
RN1107~1109
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1107,RN1108,RN1109
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
Unit: mm
l With built-in bias resistors.
l Simplify circuit design
l Reduce a quantity of parts and manufacturing process
l Complementary to RN2107~2109
Equivalent Circuit and Bias Resistor Values
Type No. R1 (kΩ)
RN1107
RN1108
RN1109
10
22
47
R2 (kΩ)
47
47
22
Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN1107~1109
RN1107~1109
RN1107
RN1108
RN1109
RN1107~1109
RN1107~1109
RN1107~1109
RN1107~1109
Symbol
VCBO
VCEO
VEBO
Ic
Pc
Tj
Tstg
Rating
50
50
6
7
15
100
100
150
−55~150
JEDEC
EIAJ
TOSHIBA
Weight: 2.4mg
Unit
V
V
V
mA
mW
°C
°C
―
―
2-2H1A
1 2001-06-07
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Pages | Pages 6 | ||
Télécharger | [ RN1109 ] |
No | Description détaillée | Fabricant |
RN1101 | Switching/ Inverter Circuit/ Interface Circuit And Driver Circuit Applications | Toshiba Semiconductor |
RN1102 | Isolated Resistor Termination Network | California Micro Devices Corp |
RN1102 | Switching/ Inverter Circuit/ Interface Circuit And Driver Circuit Applications | Toshiba Semiconductor |
RN1103 | Switching/ Inverter Circuit/ Interface Circuit And Driver Circuit Applications | Toshiba Semiconductor |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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