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RN1203 fiches techniques PDF

Toshiba Semiconductor - TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

Numéro de référence RN1203
Description TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
Fabricant Toshiba Semiconductor 
Logo Toshiba Semiconductor 





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RN1203 fiche technique
RN1201~RN1206
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1201,RN1202,RN1203,RN1204,RN1205,RN1206
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
Unit: mm
l With built-in bias resistors.
l Simplify circuit design
l Reduce a quantity of parts and manufacturing process
l Complementary to RN2201~2206
Equivalent Circuit and Bias Resistor Values
Type No. R1 (k) R2 (k)
RN1201
RN1202
RN1203
RN1204
RN1205
RN1206
4.7
10
22
47
2.2
4.7
4.7
10
22
47
47
47
Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN1201~1206
RN1201~1204
RN1205, 1206
RN1201~1206
Symbol
VCBO
VCEO
VEBO
Ic
Pc
Tj
Tstg
Rating
50
50
10
5
100
300
150
55~150
JEDEC
EIAJ
TOSHIBA
Weight: 0.13g
Unit
V
V
V
mA
mW
°C
°C
2-4E1A
1 2001-06-07

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