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RN1408 fiches techniques PDF

Toshiba Semiconductor - Switching/ Inverter Circuit/ Interface Circuit And Driver Circuit Applications

Numéro de référence RN1408
Description Switching/ Inverter Circuit/ Interface Circuit And Driver Circuit Applications
Fabricant Toshiba Semiconductor 
Logo Toshiba Semiconductor 





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RN1408 fiche technique
RN1407,RN1408,RN1409
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1407,RN1408,RN1409
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
Unit: mm
l With built-in bias resistors
l Simplify circuit design
l Reduce a quantity of parts and manufacturing process
l Complementary to RN2407~RN2409
Equivalent Circuit and Bias Resister Values
Type No.
RN1407
RN1408
RN1409
R1 (k)
10
22
47
R2 (k)
47
47
22
Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN1407~RN1409
RN1407~RN1409
RN1407
RN1408
RN1409
RN1407~RN1409
RN1407~RN1409
RN1407~RN1409
RN1407~RN1409
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
JEDEC
EIAJ
TOSHIBA
Weight: 0.012g
TO-236MOD
SC-59
2-3F1A
Rating
50
50
6
7
15
100
200
150
55~150
Unit
V
V
V
mA
mW
°C
°C
1 2001-06-07

PagesPages 7
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