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EIC discrete Semiconductors - SCHOTTKY BARRIER RECTIFIER DIODES

Numéro de référence RK13
Description SCHOTTKY BARRIER RECTIFIER DIODES
Fabricant EIC discrete Semiconductors 
Logo EIC discrete Semiconductors 





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RK13 fiche technique
RK13 - RK19
PRV : 30 - 90 Volts
IO : 1.5 - 1.7 Amperes
SCHOTTKY BARRIER
RECTIFIER DIODES
D2
FEATURES :
* High current capability
* High surge current capability
* High reliability
* High efficiency
* Low power loss
* Low forward voltage drop
* Low cost
MECHANICAL DATA :
* Case : D2 Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.465 gram
0.161 (4.1)
0.154 (3.9)
0.034 (0.86)
0.028 (0.71)
1.00 (25.4)
MIN.
0.284 (7.2)
0.268 (6.8)
1.00 (25.4)
MIN.
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
Maximum Recurrent Peak Reverse Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current TL = 75 °C
Peak Forward Surge Current single half sine wave
Superimposed on rated load
Maximum Forward Voltage at IF (Note 1)
Maximum Forward Current
Maximum Reverse Current at
Rated DC Blocking Voltage (Note 1)
Junction Temperature Range
Storage Temperature Range
SYMBOL
VRRM
VDC
IF(AV)
RK13 RK14
30 40
30 40
1.7
RK16 RK19
60 90
60 90
1.5
UNIT
Volts
Volts
Amps.
IFSM 50 Amps.
VF 0.55 0.62 0.81 Volt.
IF 2.0
1.5 Volts.
IR
TJ
TSTG
5.1 1.0
- 40 to + 125
- 40 to + 125
2
mA
°C
°C
Notes :
(1) Pulse Test : Pulse Width = 300 µs, Duty Cycle = 2%.
UPDATE : SEPTEMBER 12, 1998

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