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Hamamatsu Corporation - PHOTOMULTlPLlER TUBES

Numéro de référence R877
Description PHOTOMULTlPLlER TUBES
Fabricant Hamamatsu Corporation 
Logo Hamamatsu Corporation 





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R877 fiche technique
PHOTOMULTlPLlER TUBES
R877, R877-01
For Scintillation Counting, 127mm(5 Inch) Diameter
Bialkali Photocathode, 10-Stage, Head-On Type
GENERAL
Parameter
Spectral Response
Wavelength of Maximum Response
Photocathode
MateriaI
Window
Dynode
Direct Interelectrode
Capacitances
MateriaI
Minimum Effective Area
R877
R877 01
Structure
Number of Stages
Anode to Last Dynode
Anode to All Other Electrodes
Base
SuitabIe Socket
Description/Value
300 to 650
420
Bialkali
111
Borosilicate glass
K free Borosilicate glass
Box and Grid
10
6
7
14 pin base JEDEC No. B14 38
E678 14A(option)
Unit
nm
nm
mm dia.
pF
pF
MAXIMUM RATINGS (Absolute Maximum Values)
Parameter
Supply Voltage
Between Anode and Cathode
Between Anode and Last Dynode
Avarage Anode Current
Ambient Temperature
Value
1500
300
0.1
-30 to +50
Unit
Vdc
Vdc
mA
°C
CHARACTERISTlCS (at 25°C)
Parameter
Cathode
Sensitivity
Luminous (2856K)
Radiant at 420nm
Blue (CS 5 58 filter)
Anode Sensitivity
Luminous (2856K)
Radiant at 420nm
Gain
Anode Dark Current (after 30min. storage in darkness)
Time Response
Anode Pulse Rise Time
Electron Transit Time
Min.
60
20
Typ.
80
80
10
40
4 104
5.0 105
10
10
90
NOTE: Anode characteristics are measured with the voItage distribution ratio shown below.
Max.
50
Unit
A/lm
mA/W
A/lm b
A/W
A/W
nA
ns
ns
VOLTAGE DlSTRlBUTlON RATlO AND SUPPLY VOLTAGE
Electrodes
Ratio
K G Dy1 Dy2 Dy3 Dy4 Dy5 Dy6 Dy7 Dy8 Dy9 Dy10
1 1 1 1 1 1 1 11 1 1 1
SuppIy Voltage : 1250Vdc, K : Cathode, Dy : Dynode, P : Anode, G:Grid
P
Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office.
Information furnished by HAMAMATS U is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are
subject to change without notice. No patent rights are granted to any of the circuits described herein. © 1999 Hamamatsu Photonics K.K.

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