RA07M3340M Datasheet PDF - Mitsubishi Electric Semiconductor
| Part Number | RA07M3340M | |
| Description | MITSUBISHI RF MOSFET MODULE | |
| Manufacturers | Mitsubishi Electric Semiconductor | |
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There is a preview and RA07M3340M download ( pdf file ) link at the bottom of this page. Total 9 Pages | ||
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MITSUBISHI RF MOSFET MODULE
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RA07M3340M
330-400MHz 7W 7.2V, 2Stage Amp. For PORTABLE RADIO
DESCRIPTION
The RA07M3340M is a 7-watt RF MOSFET Amplifier Module
for 7.2-volt portable radios that operate in the 330- to 400-MHz
range.
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate
voltage (VGG=0V), only a small leakage current flows into the drain
and the RF input signal attenuates up to 60 dB. The output power
and drain current increase as the gate voltage increases. With a
gate voltage around 2.5V (minimum), output power and drain
current increases substantially. The nominal output power
becomes available at 3V (typical) and 3.5V (maximum). At
VGG=3.5V, the typical gate current is 1 mA.
This module is designed for non-linear FM modulation, but may
also be used for linear modulation by setting the drain quiescent
current with the gate voltage and controlling the output power with
the input power.
FEATURES
• Enhancement-Mode MOSFET Transistors
(IDD≅0 @ VDD=7.2V, VGG=0V)
• Pout>7W @ VDD=7.2V, VGG=3.5V, Pin=50mW
• ηT>40% @ Pout=6.5W (VGG control), VDD=7.2V, Pin=50mW
• Broadband Frequency Range: 330-400MHz
• Low-Power Control Current IGG=1mA (typ) at VGG=3.5V
• Module Size: 30 x 10 x 5.4 mm
• Linear operation is possible by setting the quiescent drain current
with the gate voltage and controlling the output power with the
input power
BLOCK DIAGRAM
2
3
14
5
1 RF Input (Pin)
2 Gate Voltage (VGG), Power Control
3 Drain Voltage (VDD), Battery
4 RF Output (Pout)
5 RF Ground (Case)
PACKAGE CODE: H46S
ORDERING INFORMATION:
ORDER NUMBER
RA07M3340M-E01
RA07M3340M-01
(Japan - packed without desiccator)
SUPPLY FORM
Antistatic tray,
25 modules/tray
RA 07M3340M
MITSUBISHI ELECTRIC
1/9
25 April 2003
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ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
OUTLINE DRAWING (mm)
(1.7)
(4.4)
30.0 ±0.2
26.6 ±0.2
21.2 ±0.2
5
1 2 34
2-R1.5 ±0.1
6.1 ±1
13.7 ±1
18.8 ±1
23.9 ±1
MITSUBISHI RF POWER MODULE
RA07M3340M
Ø0.45 ±0.15
1 RF Input (Pin)
2 Gate Voltage (VGG)
3 Drain Voltage (VDD)
4 RF Output (Pout)
5 RF Ground (Case)
RA 07M3340M
MITSUBISHI ELECTRIC
5/9
25 April 2003
Preview 5 Page |
Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for RA07M3340M electronic component. |
| Information | Total 9 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ RA07M3340M.PDF Datasheet ] | |
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Featured Datasheets
| Part Number | Description | MFRS |
| RA07M3340M | The function is MITSUBISHI RF MOSFET MODULE. Mitsubishi Electric Semiconductor | |
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| RA07M3340M-E01 | The function is MITSUBISHI RF MOSFET MODULE. Mitsubishi Electric Semiconductor | |
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