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Powerex Power Semiconductors - Asymmetrical Half Bridge IGBT H-Series Hermetic Module (400 Amperes/600 Volts)

Numéro de référence QIP0640001
Description Asymmetrical Half Bridge IGBT H-Series Hermetic Module (400 Amperes/600 Volts)
Fabricant Powerex Power Semiconductors 
Logo Powerex Power Semiconductors 





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QIP0640001 fiche technique
QIP0640001
Powerex Inc., 200 Hillis St., Youngwood, PA 15697 (724)925-7272
Asymmetrical Half Bridge IGBT H-Series
Hermetic Module
400 Amperes/600 Volts
Hermetic Package TBD
Description:
Powerex IGBT Hermetic modules are
designed for use in switching applications.
Each Module consists of two IGBT transistors,
four super fast free wheel diodes in an
asymmetrical half bridge configuration with
each transistor having a reverse connected
super fast recovery free wheel diode. All
components are located in a hermetically
sealed chamber and are electrically isolated
from the heat sinking base plate, offering
simplified system assembly and thermal
management.
Features:
Low Drive Power
Low VCE(sat)
Discrete Super-Fast Recovery
(70ns) Free-Wheel Diode
Isolated Base plate for Easy Heat
sinking
Fully Hermetic Package
Package Design Capable of Use at
High Altitudes
Package can be modified to adhere
to customer dimensions.
High Capacity Diodes (D1 & D3)
Schematic:
D1 D4
Page 1
D2 D3
Applications:
AC Motor Control
Motion/Servo Control
Air Craft Applications
Ordering Information:
PRELIMINARY
06/06/97

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