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Datasheet QS6M3-PDF.HTML Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
QS6 Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | QS6400 | Advanced ADPCM SOUND DSP Advanced ADPCM SOUND DSP for Mobile QS6400
1. General Description
. QS6400 is a high quality sound DSP for mobile phones that plays music through a built-in ADPCM decoder with sound font rom. QS6400 is equipped with HWASS's QPCM synthesizer,which is capable of generating up to 6 Altonics data | | |
2 | QS6J11 | Dual Pch -12V -2.0A Power MOSFET QS6J11
Dual Pch -12V -2.0A Power MOSFET
VDSS RDS(on) (Max.)
ID PD
-12V 105mW
-2A 1.25W
lFeatures 1) Low on - resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (TSMT6).
4) Pb-free lead plating ; RoHS compliant
lOutline TSMT6
(6) (5)
(4)
(1) (2) (3)
lInner circuit
ROHM Semiconductor mosfet | | |
3 | QS6K1 | 2.5V Drive Nch+Nch MOS FET Transistors
2.5V Drive Nch+Nch MOS FET
QS6K1
QS6K1
zStructure Silicon N-channel MOS FET
zFeatures 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small and Surface Mount Package (TSMT6).
zApplication Power switching, DC / DC converter.
zExternal dimensions (Unit : mm)
TSMT6 SOT-457
2 ROHM Semiconductor data | | |
4 | QS6K21 | Nch 45V 1A Power MOSFET QS6K21
Nch 45V 1A Power MOSFET
Datasheet
VDSS RDS(on) (Max.)
ID PD
45V 420mW
1A 1.25W
lFeatures 1) Low on - resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (TSMT6).
4) Pb-free lead plating ; RoHS compliant
lOutline
TSMT6
SOT-457T
(6) (5) (4)
(1) (2)
(3)
lInner ROHM Semiconductor mosfet | | |
5 | QS6K21FRA | Nch 45V 1A Power MOSFET QS6K21FRA
Nch 45V 1A Power MOSFET
VDSS RDS(on) (Max.)
ID PD
45V 420mW
1A 1.25W
lFeatures 1) Low on - resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (TSMT6).
4) Pb-free lead plating ; RoHS compliant
lOutline
TSMT6
Datasheet
AEC-Q101 Qualified
(6) (5) (4)
(1) (2) ROHM Semiconductor mosfet | | |
6 | QS6M3 | Small switching QS6M3
Transistors
Small switching
QS6M3
zFeatures 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small and Surface Mount Package (TSMT6). zExternal dimensions (Unit : mm)
TSMT6
1pin mark
(1)
2.8 1.6
(6)
0.4
(3)
Each lead has same dimensions
Abbreviated symbol : MO3
zAbsolute maxim ROHM Semiconductor data | | |
7 | QS6M4 | Small switching QS6M4
Transistors
Small switching
QS6M4
zFeatures 1) The QS6M4 combines Pch Trench MOSFET with a Nch Trench MOSFET in a single TSMT6 package. 2) Pch Trench MOSFET and Nch Trench MOSFET have a low on-state resistance with a fast switching. 3) Pch Trench MOSFET is neucted a low voltage drive (2.5V). ROHM Semiconductor data | |
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Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
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