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Panasonic Semiconductor - Silicon N-Channel Power F-MOS FET (with built-in zener diode)

Numéro de référence PU7457
Description Silicon N-Channel Power F-MOS FET (with built-in zener diode)
Fabricant Panasonic Semiconductor 
Logo Panasonic Semiconductor 





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PU7457 fiche technique
Power Transistor Arrays (F-MOS FETs)
PU7457
Silicon N-Channel Power F-MOS FET (with built-in zener diode)
s Features
q High avalanche energy capacity
q High electrostatic breakdown voltage
q No secondary breakdown
q High breakdown voltage, large allowable power dissipation
q Allowing Low-voltage drive
s Applications
q Contactless relay
q Diving circuit for a solenoid
q Driving circuit for a motor
q Control equipment
q Switching power supply
s Absolute Maximum Ratings (TC = 25°C)
Parameter
Symbol Ratings
Drain to Source breakdown voltage
Gate to Source voltage
Drain current
DC
Pulse
Avalanche energy capacity Non repetition
VDSS
VGSS
ID
IDP
EAS*
100 ± 15
±20
±3
±9
22.5
Allowable power
dissipation
TC = 25°C
PD
Ta = 25°C
15
3.5
Channel temperature
Storage temperature
Tch 150
Tstg 55 to +150
* L = 5mH, IL = 3A, 1 pulse
Unit
V
V
A
A
mJ
W
°C
°C
unit: mm
25.3±0.2
4.0±0.2
C1.5±0.5
0.5±0.15
1.0±0.25
2.54±0.2
9!2.54=22.86±0.25
1 2 3 4 5 6 7 8 9 10
0.8±0.25
0.5±0.15
G: Gate
D: Drain
S: Source
10-Lead Plastic SIL Package
Internal Connection
3579
468
2
1
10
s Electrical Characteristics (TC = 25°C)
Parameter
Symbol
Conditions
Drain to Source cut-off current IDSS
Gate to Source leakage current IGSS
Drain to Source breakdown voltage VDSS
Gate threshold voltage
Vth
Drain to Source ON-resistance
RDS(on)1
RDS(on)2
Forward transfer admittance
| Yfs |
Diode forward voltage
VDSF
Input capacitance (Common Source) Ciss
Output capacitance (Common Source) Coss
Reverse transfer capacitance (Common Source) Crss
Turn-on time
ton
Fall time
tf
Turn-off time (delay time)
td(off)
VDS = 80V, VGS = 0
VGS = ±20V, VDS = 0
ID = 1mA, VGS = 0
VDS = 10V, ID = 1mA
VGS = 10V, ID = 2A
VGS = 4V, ID = 2A
VDS = 10V, ID = 2A
IDR = 3A, VGS = 0
VDS = 10V, VGS = 0, f = 1MHz
VGS = 10V, ID = 2A
VDD = 50V, RL = 25
min typ max Unit
10 µA
±10 µA
85 115 V
1 2.5 V
300 450 m
400 600 m
2.5 4
S
1.6 V
130 pF
160 pF
25 pF
0.2 µs
0.3 µs
1.5 µs
1

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