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Número de pieza | PUB4701 | |
Descripción | Silicon N-Channel Power F-MOS FET | |
Fabricantes | Panasonic Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de PUB4701 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
No Preview Available ! Power Transistor Arrays (F-MOS FETs)
PUB4701
Silicon N-Channel Power F-MOS FET
s Features
q Avalanche energy capacity guaranteed
q High-speed switching
q Low ON-resistance
q No secondary breakdown
q Low-voltage drive
s Applications
q Contactless relay
q Diving circuit for a solenoid
q Driving circuit for a motor
q Control equipment
q Switching power supply
s Absolute Maximum Ratings (TC = 25°C)
Parameter
Symbol Ratings
Unit
Drain to Source breakdown voltage
Gate to Source voltage
Drain current
DC
Pulse
Avalanche energy capacity
VDSS
VGSS
ID
IDP
EAS*
Allowable power
dissipation
TC = 25°C
Ta = 25°C
PD
Channel temperature
Storage temperature
Tch
Tstg
* L = 5mH, IL = 3A, 1 pulse
150
±20
±6
±12
22.5
15
3.5
150
−55 to +150
V
V
A
A
mJ
W
°C
°C
s Electrical Characteristics (TC = 25°C)
Parameter
Symbol
Conditions
Drain to Source cut-off current IDSS
Gate to Source leakage current IGSS
Drain to Source breakdown voltage VDSS
Gate threshold voltage
Vth
Drain to Source ON-resistance
RDS(on)1
RDS(on)2
Forward transfer admittance
| Yfs |
Diode forward voltage
VDSF
Input capacitance (Common Source) Ciss
Output capacitance (Common Source) Coss
Reverse transfer capacitance (Common Source) Crss
Turn-on time (delay time)
td(on)
Rise time
tr
Fall time
tf
Turn-off time (delay time)
td(off)
VDS = 120V, VGS = 0
VGS = ±20V, VDS = 0
ID = 1mA, VGS = 0
VDS = 10V, ID = 1mA
VGS = 10V, ID = 3A
VGS = 4V, ID = 3A
VDS = 10V, ID = 3A
IDR = 3A, VGS = 0
VDS = 10V, VGS = 0, f = 1MHz
VGS = 10V, ID = 3A
VDD = 100V, RL = 33.3Ω
unit: mm
25.3±0.2
4.0±0.2
C1.5±0.5
0.5±0.15
1.0±0.25
2.54±0.2
9!2.54=22.86±0.25
1 2 3 4 5 6 7 8 9 10
0.8±0.25
0.5±0.15
G: Gate
D: Drain
S: Source
10-Lead Plastic SIL Package
min typ max Unit
10 µA
±1 µA
150 V
1 2.5 V
0.42 0.6
Ω
0.5 0.7
Ω
3 5.3
S
−1.7 V
620 pF
120 pF
35 pF
10 ns
30 ns
85 ns
290 ns
1
1 page |
Páginas | Total 2 Páginas | |
PDF Descargar | [ Datasheet PUB4701.PDF ] |
Número de pieza | Descripción | Fabricantes |
PUB4701 | Silicon N-Channel Power F-MOS FET | Panasonic Semiconductor |
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