BTA16-700CWRG Datasheet PDF - ST Microelectronics
| Part Number | BTA16-700CWRG | |
| Description | 16A TRIACS | |
| Manufacturers | ST Microelectronics | |
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® BTA/BTB16 and T16 Series
SNUBBERLESS™ , LOGIC LEVEL & STANDARD
16A TRIACS
MAIN FEATURES:
A2
Symbol
Value
Unit
IT(RMS)
16 A
VDRM/VRRM
600, 700 and 800
V
IGT (Q1)
10 to 50
mA
DESCRIPTION
Available either in through-hole or surface-mount
packages, the BTA/BTB16 and T16 triac series is
suitable for general purpose AC switching. They
can be used as an ON/OFF function in applications
such as static relays, heating regulation, induction
motor starting circuits... or for phase control
operation in light dimmers, motor speed
controllers, ...
The snubberless versions (BTA/BTB...W and T16
series) are specially recommended for use on
inductive loads, thanks to their high commutation
performances. By using an internal ceramic pad,
the BTA series provides voltage insulated tab
(rated at 2500V RMS) complying with UL
standards (File ref.: E81734).
ABSOLUTE MAXIMUM RATINGS
G
A1
A2
A1 A2
G
D2PAK
(T16-G)
A2
A1
A2
G
TO-220AB
(BTB16)
A1
A2
G
TO-220AB Insulated
(BTA16)
Symbol
Parameter
IT(RMS) RMS on-state current
(full sine wave)
ITSM
Non repetitive surge peak on-state
current (full cycle, Tj initial = 25°C)
I²t I²t Value for fusing
dI/dt
Critical rate of rise of on-state current
IG = 2 x IGT , tr ≤ 100 ns
VDSM/VRSM
Non repetitive surge peak off-state
voltage
IGM Peak gate current
PG(AV) Average gate power dissipation
Tstg Storage junction temperature range
Tj Operating junction temperature range
D2²PAK
TO-220AB
TO-220AB Ins.
F = 60 Hz
F = 50 Hz
Tc = 100°C
Tc = 85°C
t = 16.7 ms
t = 20 ms
tp = 10 ms
F = 120 Hz
Tj = 125°C
tp = 10 ms
tp = 20 µs
Tj = 25°C
Tj = 125°C
Tj = 125°C
October 2002 - Ed: 6A
Value
16
168
160
144
50
VDRM/VRRM
+ 100
4
1
- 40 to + 150
- 40 to + 125
Unit
A
A
A²s
A/µs
V
A
W
°C
1/7
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BTA/BTB16 and T16 Series
Fig. 4: On-state characteristics (maximum
values)
ITM (A)
200
100
Tj max
10
Tj=25°C
VTM (V)
Tj max:
Vto = 0.85 V
Rd = 25 mΩ
1
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Fig. 5: Surge peak on-state current versus
number of cycles.
ITSM (A)
180
160
140
120
100
Non repetitive
Tj initial=25°C
80
60 Repetitive
Tc=85°C
40
20 Number of cycles
0
1 10 100
t=20ms
One cycle
1000
Fig. 6: Non-repetitive surge peak on-state
current for a sinusoidal pulse with width
tp < 10ms, and corresponding value of I²t.
Fig. 7: Relative variation of gate trigger current,
holding current and latching current versus
junction temperature (typical values).
ITSM (A), I²t (A²s)
3000
1000
dI/dt limitation:
50A/µs
Tj initial=25°C
ITSM
100
0.01
tp (ms)
I²t
0.10 1.00 10.00
Fig. 8: Relative variation of critical rate of
decrease of main current versus (dV/dt)c (typical
values).
IGT,IH,IL[Tj] / IGT,IH,IL [Tj=25°C]
2.5
2.0
IGT
1.5
IH & IL
1.0
0.5
Tj(°C)
0.0
-40 -20 0 20 40 60 80 100 120 140
Fig. 9: Relative variation of critical rate of
decrease of main current versus junction
temperature.
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
2.0
1.8
C
1.6
B
1.4
SW
1.2
1.0
0.8
0.6
0.4
0.1
(dV/dt)c (V/µs)
1.0 10.0
BW/CW/T1635
100.0
(dI/dt)c [Tj] / (dI/dt)c [Tj specified]
6
5
4
3
2
1
Tj (°C)
0
0 25 50 75
100 125
5/7
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