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NXP Semiconductors - Three quadrant triacs high commutation

Numéro de référence BTA204W-800C
Description Three quadrant triacs high commutation
Fabricant NXP Semiconductors 
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BTA204W-800C fiche technique
Philips Semiconductors
Three quadrant triacs
high commutation
Product specification
BTA204W series B and C
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Passivated high commutation triacs in
a plastic envelope suitable for surface
mounting intended for use in circuits
where high static and dynamic dV/dt
and high dI/dt can occur. These
devices will commutate the full rated
rms current at the maximum rated
junction temperature without the aid of
a snubber.
SYMBOL PARAMETER
MAX. MAX. MAX. UNIT
VDRM
IT(RMS)
ITSM
BTA204W-
BTA204W-
Repetitive peak
off-state voltages
RMS on-state current
Non-repetitive peak on-state
current
500B
500C
500
1
10
600B
600C
600
1
10
800B
800C
800
1
10
V
A
A
PINNING - SOT223
PIN DESCRIPTION
1 main terminal 1
2 main terminal 2
3 gate
tab main terminal 2
PIN CONFIGURATION
4
123
SYMBOL
T2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
VDRM
Repetitive peak off-state
voltages
-500
- 5001
IT(RMS)
ITSM
I2t
dIT/dt
IGM
VGM
PGM
PG(AV)
Tstg
Tj
RMS on-state current
Non-repetitive peak
on-state current
I2t for fusing
Repetitive rate of rise of
on-state current after
triggering
Peak gate current
Peak gate voltage
Peak gate power
Average gate power
Storage temperature
Operating junction
temperature
full sine wave;
Tsp 108 ˚C
full sine wave;
Tj = 25 ˚C prior to
surge
t = 20 ms
t = 16.7 ms
t = 10 ms
ITM = 1.5 A;
IG = 0.2 A;
dIG/dt = 0.2 A/µs
over any 20 ms
period
-
-
-
-
-
-
-
-
-40
-
MAX.
-600
6001
1
10
11
0.5
100
2
5
5
0.5
150
125
T1
G
-800
800
UNIT
V
A
A
A
A2s
A/µs
A
V
W
W
˚C
˚C
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 6 A/µs.
December 1998
1
Rev 1.000

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