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NXP Semiconductors - Three quadrant triacs guaranteed commutation

Numéro de référence BTA204X-800E
Description Three quadrant triacs guaranteed commutation
Fabricant NXP Semiconductors 
Logo NXP Semiconductors 





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BTA204X-800E fiche technique
Philips Semiconductors
Three quadrant triacs
guaranteed commutation
Product specification
BTA204X series D, E and F
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Passivated guaranteed commutation
triacs in a plastic full pack envelope,
intended for use in motor control
circuits or with other highly inductive
loads. These devices balance the
requirements of commutation
performance and gate sensitivity. The
"sensitive gate" E series and "logic
level" D series are intended for
interfacing with low power drivers,
including micro controllers.
SYMBOL PARAMETER
MAX. MAX. MAX. UNIT
VDRM
IT(RMS)
ITSM
BTA204X-
BTA204X-
BTA204X-
Repetitive peak
off-state voltages
RMS on-state current
Non-repetitive peak on-state
current
500D
500E
500F
500
4
25
600D
600E
600F
600
4
25
-
800E
800F
800
4
25
V
A
A
PINNING - SOT186A
PIN DESCRIPTION
1 main terminal 1
2 main terminal 2
3 gate
case isolated
PIN CONFIGURATION
case
12 3
SYMBOL
T2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
VDRM
Repetitive peak off-state
voltages
-500
- 5001
IT(RMS)
ITSM
I2t
dIT/dt
IGM
VGM
PGM
PG(AV)
Tstg
Tj
RMS on-state current
Non-repetitive peak
on-state current
I2t for fusing
Repetitive rate of rise of
on-state current after
triggering
Peak gate current
Peak gate voltage
Peak gate power
Average gate power
Storage temperature
Operating junction
temperature
full sine wave;
Ths 92 ˚C
full sine wave;
Tj = 25 ˚C prior to
surge
t = 20 ms
t = 16.7 ms
t = 10 ms
ITM = 6 A; IG = 0.2 A;
dIG/dt = 0.2 A/µs
over any 20 ms
period
-
-
-
-
-
-
-
-
-40
-
MAX.
-600
6001
4
25
27
3.1
100
2
5
5
0.5
150
125
T1
G
-800
800
UNIT
V
A
A
A
A2s
A/µs
A
V
W
W
˚C
˚C
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 6 A/µs.
December 1998
1
Rev 1.000

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