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PDF BTA208-500C Data sheet ( Hoja de datos )
| Número de pieza | BTA208-500C | |
| Descripción | Three quadrant triacs high commutation | |
| Fabricantes | NXP Semiconductors | |
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Philips Semiconductors
Three quadrant triacs
high commutation
Preliminary specification
BTA208B series C
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Glass passivated high commutation
triacs in a plastic envelope intended for
use in circuits where high static and
dynamic dV/dt and high dI/dt can occur.
These devices will commutate the full
rated rms current at the maximum rated
junction temperature without the aid of
a snubber.
SYMBOL PARAMETER
MAX. MAX. MAX. UNIT
VDRM
IT(RMS)
ITSM
BTA208- 500C
Repetitive peak
500
off-state voltages
RMS on-state current
8
Non-repetitive peak
65
on-state current
600C
600
8
65
800C
800
8
65
V
A
A
PINNING - SOT404
PIN DESCRIPTION
1 main terminal 1
2 main terminal 2
3 gate
mb main terminal 2
PIN CONFIGURATION
mb
2
13
SYMBOL
T2
T1
G
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
VDRM
Repetitive peak off-state
voltages
-500
- 5001
IT(RMS)
ITSM
I2t
dIT/dt
IGM
VGM
PGM
PG(AV)
Tstg
Tj
RMS on-state current
Non-repetitive peak
on-state current
I2t for fusing
Repetitive rate of rise of
on-state current after
triggering
Peak gate current
Peak gate voltage
Peak gate power
Average gate power
Storage temperature
Operating junction
temperature
full sine wave;
Tmb ≤ 102 ˚C
full sine wave;
Tj = 25 ˚C prior to
surge
t = 20 ms
t = 16.7 ms
t = 10 ms
ITM = 12 A; IG = 0.2 A;
dIG/dt = 0.2 A/µs
over any 20 ms
period
-
-
-
-
-
-
-
-
-40
-
MAX.
-600
6001
8
65
71
21
100
2
5
5
0.5
150
125
-800
800
UNIT
V
A
A
A
A2s
A/µs
A
V
W
W
˚C
˚C
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 6 A/µs.
October 1997
1
Rev 1.000
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet BTA208-500C.PDF ] | |
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