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PDF BTA208S-800E Data sheet ( Hoja de datos )

Número de pieza BTA208S-800E
Descripción Three quadrant triacs guaranteed commutation
Fabricantes NXP Semiconductors 
Logotipo NXP Semiconductors Logotipo



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No Preview Available ! BTA208S-800E Hoja de datos, Descripción, Manual

Philips Semiconductors
Three quadrant triacs
guaranteed commutation
Objective specification
BTA208S series D, E and F
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Passivated guaranteed commutation
triacs in a plastic envelope suitable for
surface mounting, intended for use in
motor control circuits or with other highly
inductive loads. These devices balance
the requirements of commutation
performance and gate sensitivity. The
"sensitive gate" E series and "logic level"
D series are intended for interfacing with
low power drivers, including micro
controllers.
SYMBOL PARAMETER
VDRM
IT(RMS)
ITSM
BTA208S-
BTA208S-
BTA208S-
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak on-state
current
MAX. MAX. UNIT
600D
600E
600F
600
-
800E
800F
800
V
8 8A
65 65 A
PINNING - SOT428
PIN Standard
NUMBER
S
1 MT1
2 MT2
3 gate
tab MT2
PIN CONFIGURATION
tab
2
13
SYMBOL
T2
T1
G
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
VDRM
Repetitive peak off-state
voltages
-600
- 6001
IT(RMS)
ITSM
I2t
dIT/dt
IGM
VGM
PGM
PG(AV)
Tstg
Tj
RMS on-state current
Non-repetitive peak
on-state current
I2t for fusing
Repetitive rate of rise of
on-state current after
triggering
Peak gate current
Peak gate voltage
Peak gate power
Average gate power
Storage temperature
Operating junction
temperature
full sine wave;
Tmb 102 ˚C
full sine wave;
Tj = 25 ˚C prior to
surge
t = 20 ms
t = 16.7 ms
t = 10 ms
ITM = 12 A; IG = 0.2 A;
dIG/dt = 0.2 A/µs
over any 20 ms
period
-
-
-
-
-
-
-
-
-40
-
MAX.
8
65
72
21
100
2
5
5
0.5
150
125
-800
800
UNIT
V
A
A
A
A2s
A/µs
A
V
W
W
˚C
˚C
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 6 A/µs.
October 1999
1
Rev 1.200

1 page





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