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PDF BTA212X-800F Data sheet ( Hoja de datos )
| Número de pieza | BTA212X-800F | |
| Descripción | Three quadrant triacs guaranteed commutation | |
| Fabricantes | NXP Semiconductors | |
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Philips Semiconductors
Three quadrant triacs
guaranteed commutation
Product specification
BTA212X series D, E and F
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Passivated guaranteed commutation
triacs in a full pack, plastic envelope
intended for use in motor control circuits
or with other highly inductive loads.
These devices balance the
requirements of commutation
performance and gate sensitivity. The
"sensitive gate" E series and "logic level"
D series are intended for interfacing with
low power drivers, including micro
controllers.
SYMBOL PARAMETER
VDRM
IT(RMS)
ITSM
BTA212X-
BTA212X-
BTA212X-
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak on-state
current
MAX. MAX. UNIT
600D
600E
600F
600
-
800E
800F
800
V
12 12 A
95 95 A
PINNING - SOT186A
PIN DESCRIPTION
1 main terminal 1
2 main terminal 2
3 gate
case isolated
PIN CONFIGURATION
case
12 3
SYMBOL
T2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
VDRM
Repetitive peak off-state
voltages
-600
- 6001
IT(RMS)
ITSM
I2t
dIT/dt
IGM
VGM
PGM
PG(AV)
Tstg
Tj
RMS on-state current
Non-repetitive peak
on-state current
I2t for fusing
Repetitive rate of rise of
on-state current after
triggering
Peak gate current
Peak gate voltage
Peak gate power
Average gate power
Storage temperature
Operating junction
temperature
full sine wave;
Ths ≤ 56 ˚C
full sine wave;
Tj = 25 ˚C prior to
surge
t = 20 ms
t = 16.7 ms
t = 10 ms
ITM = 20 A; IG = 0.2 A;
dIG/dt = 0.2 A/µs
over any 20 ms
period
-
-
-
-
-
-
-
-
-40
-
MAX.
12
95
105
45
100
2
5
5
0.5
150
125
-800
800
T1
G
UNIT
V
A
A
A
A2s
A/µs
A
V
W
W
˚C
˚C
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.
February 2000
1
Rev 1.000
1 page  
Philips Semiconductors
Three quadrant triacs
guaranteed commutation
Product specification
BTA212X series D, E and F
IGT(Tj)
IGT(25°C)
3
2.5
T2+ G+
T2+ G-
T2- G-
2
1.5
1
0.5
0
-50
0 50 100 150
Tj/°C
Fig.7. Normalised gate trigger current
IGT(Tj)/ IGT(25˚C), versus junction temperature Tj.
IL(Tj)
IL(25 C)
3
2.5
2
1.5
1
0.5
0
-50
Fig.8.
0 50 100 150
Tj / C
Normalised latching current IL(Tj)/ IL(25˚C),
versus junction temperature Tj.
IH(Tj)
3 IH(25C)
2.5
2
1.5
1
0.5
0
-50 0 50 100 150
Tj / C
Fig.9. Normalised holding current IH(Tj)/ IH(25˚C),
versus junction temperature Tj.
IT / A
40
Tj = 125 C
Tj = 25 C
30 Vo = 1.175 V
Rs = 0.0316 Ohms
20
typ
max
10
0
0 0.5 1 1.5 2 2.5 3
VT / V
Fig.10. Typical and maximum on-state characteristic.
10 Zth j-hs (K/W)
with heatsink compound
without heatsink compound
1
unidirectional
0.1
bidirectional
0.01
P
D
tp
t
0.001
10us 0.1ms 1ms 10ms 0.1s 1s 10s
tp / s
Fig.11. Transient thermal impedance Zth j-hs, versus
pulse width tp.
dIcom/dt (A/ms)
100
F TYPE
E TYPE
D TYPE
10
1
20 40 60 80 100 120 140
Tj/˚C
Fig.12. Minimum Typical critical rate of change of
commutating current dIcom/dt versus junction
temperature, dVcom/dt = 20V/µs.
February 2000
5
Rev 1.000
5 Page | ||
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| PDF Descargar | [ Datasheet BTA212X-800F.PDF ] | |
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