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BTA216-800E fiches techniques PDF

NXP Semiconductors - Three quadrant triacs guaranteed commutation

Numéro de référence BTA216-800E
Description Three quadrant triacs guaranteed commutation
Fabricant NXP Semiconductors 
Logo NXP Semiconductors 





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BTA216-800E fiche technique
Philips Semiconductors
Three quadrant triacs
guaranteed commutation
Objective specification
BTA216 series D, E and F
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Passivated guaranteed commutation
triacs in a plastic envelope intended for
use in motor control circuits or with other
highly inductive loads. These devices
balance the requirements of commutation
performance and gate sensitivity. The
"sensitive gate" E series and "logic level"
D series are intended for interfacing with
low power drivers, including micro
controllers.
SYMBOL PARAMETER
VDRM
IT(RMS)
ITSM
BTA216-
BTA216-
BTA216-
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak on-state
current
MAX.
600D
600E
600F
600
16
140
MAX. UNIT
-
800E
800F
800
V
16 A
140 A
PINNING - TO220AB
PIN DESCRIPTION
1 main terminal 1
2 main terminal 2
3 gate
tab main terminal 2
PIN CONFIGURATION
tab
1 23
SYMBOL
T2
T1
G
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
VDRM
Repetitive peak off-state
voltages
-600
- 6001
IT(RMS)
ITSM
I2t
dIT/dt
IGM
VGM
PGM
PG(AV)
Tstg
Tj
RMS on-state current
Non-repetitive peak
on-state current
I2t for fusing
Repetitive rate of rise of
on-state current after
triggering
Peak gate current
Peak gate voltage
Peak gate power
Average gate power
Storage temperature
Operating junction
temperature
full sine wave;
Tmb 99 ˚C
full sine wave;
Tj = 25 ˚C prior to
surge
t = 20 ms
t = 16.7 ms
t = 10 ms
ITM = 20 A; IG = 0.2 A;
dIG/dt = 0.2 A/µs
over any 20 ms
period
-
-
-
-
-
-
-
-
-
-40
-
MAX.
16
140
150
98
100
2
5
5
0.5
150
125
-800
800
UNIT
V
A
A
A
A2s
A/µs
A
V
W
W
˚C
˚C
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.
October 1999
1
Rev 1.100

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