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PDF BTA216B Data sheet ( Hoja de datos )
| Número de pieza | BTA216B | |
| Descripción | Triacs | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
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DISCRETE SEMICONDUCTORS
DATA SHEET
BTA216B series B
Triacs
high commutation
Product specification
October 1997
1 page  
1;3 Semiconductors
Triacs
high commutation
Product specification
BTA216B series B
IGT(Tj)
IGT(25 C)
3
2.5
2
BTA216
T2+ G+
T2+ G-
T2- G-
1.5
1
0.5
0-50 0
50 100 150
Tj / C
Fig.7. Normalised gate trigger current
IGT(Tj)/ IGT(25˚C), versus junction temperature Tj.
IL(Tj)
IL(25 C)
3
TRIAC
2.5
2
1.5
1
0.5
0
-50
Fig.8.
0 50 100 150
Tj / C
Normalised latching current IL(Tj)/ IL(25˚C),
versus junction temperature Tj.
IH(Tj)
3 IH(25C)
TRIAC
2.5
2
1.5
1
0.5
0
-50 0 50 100 150
Tj / C
Fig.9. Normalised holding current IH(Tj)/ IH(25˚C),
versus junction temperature Tj.
50 IT / A
Tj = 125 C
Tj = 25 C
40
Vo = 1.195 V
Rs = 0.018 Ohms
30
BT139
typ max
20
10
0
0 0.5 1 1.5 2 2.5 3
VT / V
Fig.10. Typical and maximum on-state characteristic.
10 Zth j-mb (K/W)
BT139
1 unidirectional
bidirectional
0.1
0.01
P
D
tp
t
0.001
10us 0.1ms
1ms 10ms
tp / s
0.1s
1s
10s
Fig.11. Transient thermal impedance Zth j-mb, versus
pulse width tp.
dIcom/dt (A/ms)
1000
BTA216
100
10
1
20 40 60 80 100 120 140
Tj / C
Fig.12. Typical, critical rate of change of commutating
current dIcom/dt versus junction temperature.
October 1997
4
Rev 1.100
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet BTA216B.PDF ] | |
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