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BTA216X-600D fiches techniques PDF

NXP Semiconductors - Three quadrant triacs guaranteed commutation

Numéro de référence BTA216X-600D
Description Three quadrant triacs guaranteed commutation
Fabricant NXP Semiconductors 
Logo NXP Semiconductors 





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BTA216X-600D fiche technique
Philips Semiconductors
Three quadrant triacs
guaranteed commutation
Objective specification
BTA216X series D, E and F
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Passivated guaranteed commutation
triacs in a full pack, plastic envelope
intended for use in motor control circuits
or with other highly inductive loads.
These devices balance the
requirements of commutation
performance and gate sensitivity. The
"sensitive gate" E series and "logic level"
D series are intended for interfacing with
low power drivers, including micro
controllers.
SYMBOL PARAMETER
VDRM
IT(RMS)
ITSM
BTA216X-
BTA216X-
BTA216X-
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak on-state
current
MAX. MAX. UNIT
600D
600E
600F
600
-
800E
800F
800
V
16 16
140 140
A
A
PINNING - SOT186A
PIN DESCRIPTION
1 main terminal 1
2 main terminal 2
3 gate
case isolated
PIN CONFIGURATION
case
12 3
SYMBOL
T2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
VDRM
Repetitive peak off-state
voltages
-600
- 6001
IT(RMS)
ITSM
I2t
dIT/dt
IGM
VGM
PGM
PG(AV)
Tstg
Tj
RMS on-state current
Non-repetitive peak
on-state current
I2t for fusing
Repetitive rate of rise of
on-state current after
triggering
Peak gate current
Peak gate voltage
Peak gate power
Average gate power
Storage temperature
Operating junction
temperature
full sine wave;
Ths 38 ˚C
full sine wave;
Tj = 25 ˚C prior to
surge
t = 20 ms
t = 16.7 ms
t = 10 ms
ITM = 20 A; IG = 0.2 A;
dIG/dt = 0.2 A/µs
over any 20 ms
period
-
-
-
-
-
-
-
-
-40
-
MAX.
16
140
150
98
100
2
5
5
0.5
150
125
-800
800
T1
G
UNIT
V
A
A
A
A2s
A/µs
A
V
W
W
˚C
˚C
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.
October 1999
1
Rev 1.000

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