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PDF BTS432E2 Data sheet ( Hoja de datos )
| Número de pieza | BTS432E2 | |
| Descripción | Smart Highside Power Switch | |
| Fabricantes | Siemens Semiconductor Group | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BTS432E2 (archivo pdf) en la parte inferior de esta página. Total 13 Páginas | ||
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PROFET® BTS 432 E2
Smart Highside Power Switch
Features
Product Summary
• Load dump and reverse battery protection1)
• Clamp of negative voltage at output
• Short-circuit protection
• Current limitation
• Thermal shutdown
• Diagnostic feedback
• Open load detection in ON-state
• CMOS compatible input
VLoad dump
80
Vbb-VOUT Avalanche Clamp
58
Vbb (operation)
4.5 ... 42
Vbb (reverse)
-32
RON
38
IL(SCp)
44
IL(SCr)
35
• Electrostatic discharge (ESD) protection
IL(ISO)
11
• Loss of ground and loss of Vbb protection2)
• Overvoltage protection
• Undervoltage and overvoltage shutdown with auto-restart and hysteresis
Application
• µC compatible power switch with diagnostic feedback
for 12 V and 24 V DC grounded loads
• All types of resistive, inductive and capacitve loads
• Replaces electromechanical relays and discrete circuits
V
V
V
V
mΩ
A
A
A
5
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic
feedback, integrated in Smart SIPMOS® chip on chip technology. Fully protected by embedded protection
functions.
2 IN
Voltage
source
V Logic
Voltage
sensor
ESD
4 ST
Logic
Overvoltage Current
Gate
protection
limit protection
R bb
+ Vbb 3
Charge pump
Level shifter
Rectifier
Limit for
unclamped
ind. loads
Open load
detection
OUT
Temperature
sensor
5
Load
Short circuit
detection
GND
1
Signal GND
PROFET®
Load GND
1) No external components required, reverse load current limited by connected load.
2) Additional external diode required for charged inductive loads
Semiconductor Group
1
04.96
1 page  
Parameter and Conditions
at Tj = 25 °C, Vbb = 12 V unless otherwise specified
Symbol
Input and Status Feedback11)
Input turn-on threshold voltage
Input turn-off threshold voltage
Input threshold hysteresis
Off state input current (pin 2)
Tj =-40..+150°C:
Tj =-40..+150°C:
VIN = 0.4 V:
VIN(T+)
VIN(T-)
∆ VIN(T)
IIN(off)
On state input current (pin 2)
VIN = 3.5 V: IIN(on)
Status invalid after positive input slope
(short circuit)
Tj=-40 ... +150°C:
Status invalid after positive input slope
(open load)
Tj=-40 ... +150°C:
Status output (open drain)
Zener limit voltage Tj =-40...+150°C, IST = +1.6 mA:
ST low voltage Tj =-40...+150°C, IST = +1.6 mA:
td(ST SC)
td(ST)
VST(high)
VST(low)
BTS 432 E2
Values
Unit
min typ max
1.5 -- 2.4 V
1.0 -- -- V
-- 0.5
1 --
-- V
30 µA
10 25 50 µA
80 200 400 µs
350 -- 1600 µs
5.4 6.1
--
-- -- 0.4
V
11) If a ground resistor RGND is used, add the voltage drop across this resistor.
Semiconductor Group
5
5 Page 
Figure 3b: Turn on into overload,
IN
IL
I L(SCp)
IL(SCr)
Figure 4a: Overtemperature:
Reset if Tj <Tjt
IN
BTS 432 E2
ST
V
OUT
T
ST t J
Heating up may require several milliseconds , Vbb - VOUT < 8.3 V
typ.
Figure 3c: Short circuit while on:
t
Figure 5a: Open load: detection in ON-state, turn
on/off to open load
IN IN
t
ST ST d(ST)
V OUT
V
OUT
I L **)
**) current peak approx. 20 µs
I
L
t
open
t
Semiconductor Group
11
11 Page | ||
| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet BTS432E2.PDF ] | |
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