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PDF BTS432I2 Data sheet ( Hoja de datos )
| Número de pieza | BTS432I2 | |
| Descripción | Smart Highside Power Switch (Clamp of negative voltage at output Short-circuit protection Current limitation Thermal shutdown) | |
| Fabricantes | Siemens Semiconductor Group | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BTS432I2 (archivo pdf) en la parte inferior de esta página. Total 14 Páginas | ||
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PROFET® BTS 432 I2
Smart Highside Power Switch
Features
Product Summary
• Load dump and reverse battery protection1)
• Clamp of negative voltage at output
• Short-circuit protection
• Current limitation
• Thermal shutdown
• Diagnostic feedback
• Open load detection in OFF-state
• CMOS compatible input
VLoad dump
80
Vbb-VOUT Avalanche Clamp
58
Vbb (operation)
4.5 ... 42
Vbb (reverse)
-32
RON
38
IL(SCp)
42
IL(SCr)
33
• Electrostatic discharge (ESD) protection
IL(ISO)
11
• Loss of ground and loss of Vbb protection2)
• Overvoltage protection
• Undervoltage and overvoltage shutdown with auto-restart and hysteresis
Application
• µC compatible power switch with diagnostic feedback
for 12 V and 24 V DC grounded loads
• All types of resistive, inductive and capacitve loads
• Replaces electromechanical relays and discrete circuits
V
V
V
V
mΩ
A
A
A
5
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic
feedback, integrated in Smart SIPMOS® chip on chip technology. Fully protected by embedded protection
functions.
2 IN
Voltage
source
V Logic
Voltage
sensor
ESD
4 ST
Logic
R bb
Overvoltage Current
Gate
protection
limit protection
+ Vbb 3
Charge pump
Level shifter
Rectifier
Limit for
unclamped
ind. loads
Open load
detection
OUT
Temperature
sensor
5
Load
Short circuit
detection
GND
1
Signal GND
PROFET®
Load GND
1) No external components required, reverse load current limited by connected load.
2) Additional external diode required for charged inductive loads
Semiconductor Group
1
04.96
1 page  
Parameter and Conditions
at Tj = 25 °C, Vbb = 12 V unless otherwise specified
Symbol
Input and Status Feedback11)
Input turn-on threshold voltage
Input turn-off threshold voltage
Input threshold hysteresis
Off state input current (pin 2)
Tj =-40..+150°C:
Tj =-40..+150°C:
VIN = 0.4 V:
VIN(T+)
VIN(T-)
∆ VIN(T)
IIN(off)
BTS 432 I2
Values
Unit
min typ max
1.5 -- 2.4 V
1.0 -- -- V
-- 0.5
1 --
-- V
30 µA
On state input current (pin 2)
VIN = 3.5 V: IIN(on)
10 25 50 µA
Delay time for status with open load
after Input neg. slope (see diagram page 12)
td(ST OL3)
40 -- 300 µs
Status invalid after positive input slope
td(ST SC)
80 200 400 µs
(short circuit)
Tj=-40 ... +150°C:
Status output (CMOS)
Tj =-40...+150°C, IST= - 50 µA: VST(high)12) 4.4 5.1 6.5
V
Tj =-40...+150°C, IST = +1.6 mA: VST(low)
-- -- 0.4
Max. status current for
current source (out): -IST
-- -- 0.25 mA
valid status output,
current sink (in) : +IST13)
-- -- 1.6
Tj =-40...+150°C
11)
12)
If a ground resistor RGND is used, add the voltage drop across this resistor.
VSt high ≈ Vbb during undervoltage shutdown
13) No current sink capability during undervoltage shutdown
Semiconductor Group
5
5 Page 
Figure 3b: Turn on into overload,
IN
IL
I L(SCp)
I L(SCr)
Figure 4a: Overtemperature,
Reset if (IN=low) and (Tj<Tjt)
IN
BTS 432 I2
ST
V
OUT
ST
t
Heating up may require several milliseconds , Vbb - VOUT < 8.3 V
typ.
Figure 3c: Short circuit while on:
IN
T
J
*) ST goes high , when VIN=low and Tj<Tjt
t
Figure 5a: Open load: detection in ON-state, open
load occurs in on-state
ST
V OUT
IN
td(ST OL1)
ST
V
OUT
t d(OL ST2)
I L **)
**) current peak approx. 20 µs
I normal
open
normal
tL
t
td(ST OL1) = tbd µs typ., td(ST OL2) = tbd µs typ
Semiconductor Group
11
11 Page | ||
| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet BTS432I2.PDF ] | |
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