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PDF BTS452T Data sheet ( Hoja de datos )
| Número de pieza | BTS452T | |
| Descripción | Smart Power High-Side-Switch | |
| Fabricantes | Infineon Technologies AG | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BTS452T (archivo pdf) en la parte inferior de esta página. Total 16 Páginas | ||
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BTS 452 T
Smart Power High-Side-Switch
Features
Product Summary
• Overload protection
• Current limitation
• Short circuit protection
• Thermal shutdown with restart
• Overvoltage protection
(including load dump)
Overvoltage protection
Operating voltage
On-state resistance
Nominal load current
• Fast demagnetization of inductive loads
• Reverse battery protection
with external resistor
• CMOS compatible input
• Loss of GND and loss of Vbb protection
• ESD - Protection
• Very low standby current
Vbb(AZ)
Vbb(on)
RON
IL(ISO)
62
6...52
200
1.8
V
V
mΩ
A
P-TO252-5-11
Application
• All types of resistive, inductive and capacitive loads
• µC compatible power switch for 12 V, 24 V and 42 V DC applications
• Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input,
monolithically integrated in Smart SIPMOS technology.
Providing embedded protective functions.
Page 1
2004-01-27
1 page  
BTS 452 T
Electrical Characteristics
Parameter and Conditions
at Tj = -40...150°C, Vbb = 12..42V, unless otherwise specified
Protection Functions1)
Initial peak short circuit current limit (pin 3 to 5)
Tj = -40 °C, Vbb = 20 V, tm = 150 µs
Tj = 25 °C
Tj = 150 °C
Tj = -40...+150 °C, Vbb > 40 V , ( see page 11 )
Repetitive short circuit current limit
Tj = Tjt (see timing diagrams)
Vbb < 40 V
Vbb > 40 V
Output clamp (inductive load switch off)
at VOUT = Vbb - VON(CL),
Ibb = 4 mA
Overvoltage protection 3)
Ibb = 4 mA
Thermal overload trip temperature
Thermal hysteresis
Symbol
I L(SCp)
I L(SCr)
VON(CL)
Vbb(AZ)
Tjt
∆Tjt
Values
Unit
min. typ. max.
A
--9
- 6.5 -
4- -
- 52)
-
-6
- 4.5
59 63
-
-
-V
62 -
150 -
- 10
-
- °C
-K
Reverse Battery
Reverse battery4)
Drain-source diode voltage (VOUT > Vbb)
Tj = 150 °C
-Vbb
-VON
- - 52 V
- 600 - mV
1Integrated protection functions are designed to prevent IC destruction under fault conditions
described in the data sheet. Fault conditions are considered as "outside" normal operating range.
Protection functions are not designed for continuous repetitive operation .
2not subject to production test, specified by design
3 see also VON(CL) in circuit diagram on page 7
4Requires a 150 Ω resistor in GND connection. The reverse load current through the intrinsic drain-source diode has
to be limited by the connected load. Power dissipation is higher compared to normal operating conditions due to the
voltage drop across the drain-source diode. The temperature protection is not active during reverse current operation!
Input current has to be limited (see max. ratings page 3).
Page 5
2004-01-27
5 Page 
Typ. standby current
Ibb(off) = f(Tj) ; Vbb = 42V ; VIN = low
10
µA
BTS 452 T
Typ. leakage current
IL(off) = f(Tj) ; Vbb = 42V ; VIN = low
2.5
µA
6 1.5
41
2 0.5
0-40 -20 0 20 40 60 80 100 120 °C 160
Tj
Typ. initial peak short circuit current limit
IL(SCp) = f(Vbb)
0-40 -20 0 20 40 60 80 100 120 °C 160
Tj
Typ. initial short circuit shutdown time
toff(SC) = f(Tj,start) ; Vbb = 20V
10
A -40°C
25°C
6 150°C
4
2
6
ms
4
3
2
1
00 10 20 30 40 V 60
Vbb
0-40 -20 0 20 40 60 80 100 120 °C 160
Tj
Page 11
2004-01-27
11 Page | ||
| Páginas | Total 16 Páginas | |
| PDF Descargar | [ Datasheet BTS452T.PDF ] | |
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