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PDF BTS4880R Data sheet ( Hoja de datos )
| Número de pieza | BTS4880R | |
| Descripción | Smart Power High-Side-Switch Eight Channels: 8 x 200 m | |
| Fabricantes | Infineon Technologies AG | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BTS4880R (archivo pdf) en la parte inferior de esta página. Total 20 Páginas | ||
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BTS 4880 R
Smart Power High-Side-Switch
Eight Channels: 8 x 200 mΩ
Features
Product Summary
• Output current 0,625 A per channel
• Short circuit protection
• Maximum current internally limited
• Overload protection
• Input protection
Overvoltage protection
Operating voltage
On-state resistance
Vbb(AZ)
Vbb(on)
RON
47 V
11...45 V
200 mΩ
• Overvoltage protection (including load dump)
• Undervoltage shutdown with auto-
restart and hysteresis
• Switching inductive loads
• Thermal shutdown with restart
• Thermal independence of separate channels
P-DSO-36-12; -10
• ESD - Protection
• Loss of GND and loss of Vbb protection
• Very low standby current
• Reverse battery protection
• Programmable input for CMOS or Vbb/2
• Common diagnostic output ( current output )
for overtemperature
Application
• Output driver for industrial applications ( PLC )
• All types of resistive, inductive and capacitive loads
• µC or optocoupler compatible power switch for 24 V DC applications
• Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET with charge pump, ground referenced CMOS or Vbb/2
compatible input and common diagnostic feedback, monolithically integrated in
Smart SIPMOS technology. Providing embedded protective functions.
Page 1
2004-01-27
1 page  
BTS 4880 R
Electrical Characteristics
Parameter
at Tj = -25...125°C, Vbb=15...30V, unless otherwise specified
Thermal Characteristics
Thermal resistance junction - case
Thermal resistance @ min. footprint
Thermal resistance @ 6 cm 2 cooling area 1)
Symbol
RthJC
Rth(JA)
Rth(JA)
Load Switching Capabilities and Characteristics
On-state resistance
Tj = 25 °C, IL = 0.5 A
Tj = 125 °C
Turn-on time
to 90% VOUT
RL = 47 Ω, VIN = 0 to 10 V
Turn-off time
to 10% VOUT
RL = 47 Ω, VIN = 10 to 0 V
RON
ton
toff
Slew rate on 10 to 30% VOUT,
RL = 47 Ω, Vbb = 15 V
Slew rate off 70 to 40% V OUT,
RL = 47 Ω, Vbb = 15 V
dV/dton
-dV/dtoff
Values
Unit
min. typ. max.
- - 1.5 K/W
- - 50
- - 38
mΩ
- 150 200
- 270 320
- 50 100 µs
- 75 150
- 1 2 V/µs
- 12
1 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain
connection. PCB is vertical without blown air.
Page 5
2004-01-27
5 Page 
BTS 4880 R
GND disconnect
LS Vbb DIAG
IN1...8
PROFET OUT1...8
Vbb VIN
GND
VGND
GND disconnect with GND pull up
LS Vbb DIAG
IN1...8 PROFET OUT1...8
GND
Vbb VIN VST VGND
Inductive Load switch-off energy
dissipation, each channel
E bb
=
EAS
Vbb
IN PROFET OUT
{GND
L
ZL
RL
ELoad
EL
ER
Energy stored in load inductance: EL = ½ * L * IL2
While demagnetizing load inductance,
the enérgy dissipated in PROFET is
EAS = Ebb + EL - ER = VON(CL) * iL(t) dt,
with an approximate solution for RL > 0Ω:
EAS =
IL * L
2 * RL
* (V bb + | V O U T ( C L )| ) * ln (1 +
|
I
V
L
O
*
UT
RL
(CL
)|
)
Vbb disconnect with charged inductive
load
LS Vbb DIAG
high
IN1...8
PROFET OUT1...8
GND
Vbb
Page 11
2004-01-27
11 Page | ||
| Páginas | Total 20 Páginas | |
| PDF Descargar | [ Datasheet BTS4880R.PDF ] | |
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