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PDF BTS5240G Data sheet ( Hoja de datos )
| Número de pieza | BTS5240G | |
| Descripción | Smart High-Side Power Switch | |
| Fabricantes | Infineon Technologies AG | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BTS5240G (archivo pdf) en la parte inferior de esta página. Total 17 Páginas | ||
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BTS 5240G
Smart High-Side Power Switch
Two Channels: 2 x 25mΩ
IntelliSense
Product Summary
Operating voltage
Vbb(on)
Active channels
On-state resistance
Nominal load current
Current limitation
Low
High
RON
IL(nom)
IL(SCr)
4,5...28
V
( Loaddump: 40 V )
one two parallel
25 13 mΩ
5.9 8,4 A
10 A
40
Package
P–DSO–20–21
General Description
• N channel vertical power MOSFET with charge pump, ground referenced CMOS compatible input and
diagnostic feedback, monolithically integrated in Smart SIPMOS technology.
• Providing embedded protective functions.
• Extern adjustable current limitation.
Application
• All types of resistive, inductive and capacitive loads
• µC compatible high-side power switch with diagnostic feedback for 12 V grounded loads
• Due to the adjustable current limitation best suitable for loads with high inrush currents, so as lamps
• Replaces electromechanical relays, fuses and discrete circuits
Basic Functions
• Very low standby current
• CMOS compatible input
• Improved electromagnetic compatibility (EMC)
• Stable behaviour at low battery voltage
Protection Functions
• Reverse battery protection with external resistor
• Short circuit protection
• Overload protection
• Current limitation
• Thermal Shutdown
• Overvoltage protection with external resistor
• Loss of GND and loss of Vbb protection
• Electrostatic discharge Protection (ESD)
Block Diagram
Vbb
IN1
IS1
IN2
IS2
CLA
Logic
Channel 1
Channel 2
GND
Load 1
Load 2
Diagnostic Function: IntelliSense
• Proportional load current sense ( with defined fault signal during thermal shutdown and overload )
• Additional open load detection in OFF - state
• Suppressed thermal toggling of fault signal
Page 1
2005-06-03
1 page  
BTS 5240G
Electrical Characteristics
Parameter and Conditions, each of the two channels Symbol
at Tj = -40...+150 °C, Vbb = 9...16 V, unless otherwise specified
Thermal Resistance
junction - soldering point
junction - ambient1)
each channel: RthJS
one channel active: RthJA
all channels active:
Values
Unit
min. typ. max.
- 18 - K/W
- 44 - K/W
42
Load Switching Capabilities and Characteristics
On-state resistance (Vbb to OUT), (see page 13)
Tj = 25 °C, IL = 5 A,
each channel:
Tj = 150 °C,
each channel:
Tj = 25 °C,
two parallel channels:
Nominal load current1)
Ta = 85°C, Tj ≤ 150°C ,
one channel active:
two channels active, per channel:
RON
I L(nom)
mΩ
- 21 25
- 42 50
- 11 13
A
5.4 5.9
3.9 4.2
-
-
Output voltage drop limitation at small load currents VON(NL)
- 40 - mV
IL = 0.5 A
Output current while GND disconnected2)
IL(GNDhigh) - - 2 mA
( see diagram page 12 )
VIN = 0 V
1Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for Vbb
connection. PCB is vertical without blown air.
2not subject to production test, specified by design
Page 5
2005-06-03
5 Page 
Input circuit ( ESD protection ), IN1 or IN2
IN RI
ESD-ZD I
GND
II
The use of ESD zener diodes as voltage clamp
at DC conditions is not recommended.
Sense-Status output, IS1 or IS2
ON-State: Normal operation: IS = IL / kILIS
VIS = IS * RIS; RIS = 1kΩ nominal
RIS > 500Ω
I IS
Sense output
logic
IS
VIS
Vf
ESD-ZD
GND
RIS
ESD zener diode: VESD = 6,1 V typ., max. 14 mA ;
ON-State: Fault condition so as thermal shut down
or current limitation
Vfault
Vf
Sense output
logic
ESD-ZD
GND
Vfault
RIS
Vfault = 6 V typ ; Vfault < VESD under all conditions
OFF-State diagnostic condition:
Open Load, if VOUT > 3 V typ.; IN low
BTS 5240G
Inductive and overvoltage output clamp,
OUT1 or OUT2
+Vbb
VZ
OUT
V OUT
GND
Power GND
VOUT clamped to VOUT(CL) = -15 V typ.
Overvolt. Protection of logic part
OUT1 or OUT2
+ Vbb
IN R I
IS
R IS
V Z1
Logic
V Z2
R GND
PROFET
GND
Signal GN D
VZ1 = 6,1V typ., VZ2 = 47V typ., RGND = 150Ω ,
RIS = 1kΩ , RI = 3,5kΩ typ.
Int. 5V
GND
IS - ST
ESD-
ZD
RIS
ESD-Zener diode: 6,1V typ., max. 5mA; RST(ON) < 375Ω
at 1,6mA.. The use of ESD zener diodes as voltage clamp
at DC conditions is not recommended.
Page 11
2005-06-03
11 Page | ||
| Páginas | Total 17 Páginas | |
| PDF Descargar | [ Datasheet BTS5240G.PDF ] | |
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