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PDF BTS542E2 Data sheet ( Hoja de datos )
| Número de pieza | BTS542E2 | |
| Descripción | Smart Highside Power Switch (Overload protection Current limitation Short-circuit protection Thermal shutdown) | |
| Fabricantes | Siemens Semiconductor Group | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BTS542E2 (archivo pdf) en la parte inferior de esta página. Total 13 Páginas | ||
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PROFET® BTS 542 E2
Smart Highside Power Switch
Features
· Overload protection
· Current limitation
· Short-circuit protection
· Thermal shutdown
· Overvoltage protection (including load dump)
· Fast demagnetization of inductive loads
· Reverse battery protection1)
· Undervoltage and overvoltage shutdown with
auto-restart and hysteresis
· Open drain diagnostic output
· Open load detection in ON-state
· CMOS compatible input
· Loss of ground and loss of Vbb protection2)
· Electrostatic discharge (ESD) protection
Product Summary
Overvoltage protection
Operating voltage
On-state resistance
Load current (ISO)
Current limitation
Vbb(AZ)
Vbb(on)
RON
IL(ISO)
IL(SCr)
63 V
4.5 ... 42 V
18 mW
21 A
70 A
TO-218AB/5
5
A· mpCpcliocmaptiaotibnle power switch with diagnostic
feedback for 12 V and 24 V DC grounded loads
· All types of resistive, inductive and capacitve loads
· Replaces electromechanical relays and discrete circuits
Standard
General Description
âN channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic
feedback, integrated in Smart SIPMOS chip on chip technology. Fully protected by embedded protection
functions.
2 IN
Voltage
source
8
Logic
Voltage
sensor
ESD
4 ST
Logic
Overvoltage Current
Gate
protection
limit protection
R
bb
+ V bb
3
Charge pump
Level shifter
Rectifier
Limit for
unclamped
ind. loads
Open load
detection
OUT
Temperature
5
sensor
Load
Short circuit
detection
GND
1
Signal GND
PROFET®
Load GND
1) No external components required, reverse load current limited by connected load.
2) Additional external diode required for charged inductive loads
Semiconductor Group
Page 1 of 13
8.Jan.96
1 page  
Parameter and Conditions
at Tj = 25 °C, Vbb = 12 V unless otherwise specified
Symbol
Input and Status Feedback10)
Input turn-on threshold voltage
Tj =-40..+150°C:
Input turn-off threshold voltage
Tj =-40..+150°C:
Input threshold hysteresis
Off state input current (pin 2), VIN = 0.4 V
VIN(T+)
VIN(T-)
D VIN(T)
IIN(off)
On state input current (pin 2), VIN = 3.5 V
IIN(on)
Status invalid after positive input slope
(short circuit)
Tj=-40 ... +150°C:
Status invalid after positive input slope
(open load)
Tj=-40 ... +150°C:
Status output (open drain)
Zener limit voltage Tj =-40...+150°C, IST = +1.6 mA:
ST low voltage Tj =-40...+150°C, IST = +1.6 mA:
td(ST SC)
td(ST)
VST(high)
VST(low)
BTS 542 E2
Values
Unit
min typ max
1.5 -- 2.4 V
1.0 -- -- V
-- 0.5
1 --
-- V
30 mA
10 25 50 mA
80 200 400 ms
350 -- 1600 ms
5.4 6.1
--
-- -- 0.4
V
10) If a ground resistor RGND is used, add the voltage drop across this resistor.
Semiconductor Group
Page 5
8.Jan.96
5 Page 
Figure 3b: Turn on into overload,
IN
IL
I L(SCp)
IL(SCr)
ST
Heating up may require several milliseconds,
Vbb - VOUT < 8.3 V typ.
Figure 3c: Short circuit while on:
IN
ST
V OUT
IL
**)
**) current peak approx. 20 ms
Figure 4a: Overtemperature:
Reset if Tj <Tjt
IN
BTS 542 E2
ST
V
OUT
T
tJ
t
Figure 5a: Open load: detection in ON-state, turn
on/off to open load
IN
t
ST d(ST)
V
OUT
I
L
t
open
t
Semiconductor Group
Page 11
8.Jan.96
11 Page | ||
| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet BTS542E2.PDF ] | |
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