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PDF BTS550P Data sheet ( Hoja de datos )
| Número de pieza | BTS550P | |
| Descripción | Smart Highside High Current Power Switch | |
| Fabricantes | Infineon Technologies AG | |
| Logotipo |  |
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PROFET® Data Sheet BTS550P
Smart Highside High Current Power Switch
Reversave
Product Summary
• Reverse battery protection by self turn on of
power MOSFET
Overvoltage protection Vbb(AZ)
Output clamp
VON(CL)
62 V
44 V
Features
• Overload protection
• Current limitation
Operating voltage
On-state resistance
Vbb(on) 5.0 ... 34 V
RON
3.6 mΩ
• Short circuit protection
Load current (ISO)
IL(ISO)
115 A
• Overtemperature protection
• Overvoltage protection (including load dump)
• Clamp of negative voltage at output
Short circuit current limitation IL(SC)
Current sense ratio
IL : IIS
220 A
21000
• Fast deenergizing of inductive loads 1)
• Low ohmic inverse current operation
• Diagnostic feedback with load current sense
TO-218AB/5
• Open load detection via current sense
• Loss of Vbb protection2)
• Electrostatic discharge (ESD) protection
Application
5
• Power switch with current sense diagnostic
feedback for 12 V and 24 V DC grounded loads
• Most suitable for loads with high inrush current
1
Straight leads
like lamps and motors; all types of resistive and
inductive loads
• Replaces electromechanical relays, fuses and discrete circuits
General Description
N channel vertical power FET with charge pump, current controlled input and diagnostic feedback with load
current sense, integrated in Smart SIPMOS chip on chip technology. Providing embedded protective functions.
Voltage
source
Voltage
sensor
2 IN
ESD
I IN
Logic
VIN
VIS
Logic GND
IS I IS
4
RIS
Overvoltage
protection
Current
limit
Gate
protection
R bb
Charge pump
Level shifter
Rectifier
Limit for
unclamped
ind. loads
Output
Voltage
detection
Current
Sense
3 & Tab
+ Vbb
OUT 1, 5
IL
Load
Temperature
sensor
PROFET
Load GND
1) With additional external diode.
2) Additional external diode required for energized inductive loads (see page 9).
Infineon Technologies AG
1 of 15
2003-Oct-01
1 page  
Parameter and Conditions
at Tj = -40 ... +150 °C, Vbb = 12 V unless otherwise specified
Symbol
Protection Functions15)
Short circuit current limit (Tab to pins 1,5)16
VON = 12 V, time until shutdown max. 350 µs Tc =-40°C:
Tc =25°C:
Tc =+150°C:
Short circuit shutdown delay after input current
positive slope, VON > VON(SC)
min. value valid only if input "off-signal" time exceeds 30 µs
Output clamp 17)
(inductive load switch off)
IL= 40 mA:
Output clamp (inductive load switch off)
at VOUT = Vbb - VON(CL) (e.g. overvoltage)
IL= 40 mA
Short circuit shutdown detection voltage
(pin 3 to pins 1,5)
Thermal overload trip temperature
Thermal hysteresis
IL(SCp)
td(SC)
-VOUT(CL)
VON(CL)
VON(SC)
Tjt
∆Tjt
Reverse Battery
Reverse battery voltage 18)
On-state resistance (Pins 1,5 to pin 3)
Vbb =-12V, VIN=0, IL=- 20 A, RIS =1 kΩ
Integrated resistor in Vbb line
Tj = 25°C:
Tj = 150°C:
Tj=25°C:
Tj=150°C:
-Vbb
RON(rev)
Rbb
Data Sheet BTS550P
Values
Unit
min typ max
100 190 350
110 220 330
120 210 310
A
80 -- 350 µs
14 17 20 V
40 44 47 V
-- 6
150 --
-- 10
-- V
-- °C
-- K
-- -- 32 V
-- 3.4 4.3 mΩ
-- 7.5
90 110 135
105 125 150
Ω
15) Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are not
designed for continuous repetitive operation.
16 ) Short circuit is a failure mode. The device is not designed to operate continuously into a short circuit by
permanent resetting the short circuit latch function. The lifetime will be reduced under such conditions.
17) This output clamp can be "switched off" by using an additional diode at the IS-Pin (see page 8). If the diode
is used, VOUT is clamped to Vbb- VON(CL) at inductive load switch off.
18) The reverse load current through the intrinsic drain-source diode has to be limited by the connected load (as
it is done with all polarity symmetric loads). Note that under off-conditions (IIN = IIS = 0) the power transistor
is not activated. This results in raised power dissipation due to the higher voltage drop across the intrinsic
drain-source diode. The temperature protection is not active during reverse current operation! Increasing
reverse battery voltage capability is simply possible as described on page 9.
Infineon Technologies AG
5
2003-Oct-01
5 Page 
Characteristics
Data Sheet BTS550P
Current sense versus load current:
IIS = f(IL)
IIS [mA]
7
Current sense ratio:
KILIS = f(IL), TJ = 25 °C
kilis
34000
6
5
max
4
3
min
2
1
0
0 20 40 60 80 100 120
32000
30000
28000
26000
24000
22000
20000
18000
16000
0
max
typ
min
20 40 60
Current sense ratio:
KILIS = f(IL), TJ = -40 °C
Kilis
46000
44000
42000
40000
38000
36000
34000
32000
30000
28000
26000
24000
22000
20000
18000
16000
14000
12000
0
max
typ
min
20 40 60
IL [A]
Current sense ratio:
KILIS = f(IL), TJ = 150 °C
Kilis
30000
28000
26000
24000
22000
20000
max
typ
80 100 120
18000
16000
0
min
20 40 60
IL [A]
80 100 120
IL [A]
80 100 120
IL [A]
Infineon Technologies AG
11
2003-Oct-01
11 Page | ||
| Páginas | Total 15 Páginas | |
| PDF Descargar | [ Datasheet BTS550P.PDF ] | |
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