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PDF BTS555 Data sheet ( Hoja de datos )
| Número de pieza | BTS555 | |
| Descripción | Smart Highside High Current Power Switch | |
| Fabricantes | Siemens Semiconductor Group | |
| Logotipo |  |
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PROFET® Target Data Sheet BTS555
Smart Highside High Current Power Switch
Features
• Overload protection
• Current limitation
• Short circuit protection
• Overtemperature protection
• Overvoltage protection (including load dump)
• Clamp of negative voltage at output
• Fast deenergizing of inductive loads 1)
• Low ohmic inverse current operation
• Reverse battery protection
• Diagnostic feedback with load current sense
• Open load detection via current sense
• Loss of Vbb protection2)
• Electrostatic discharge (ESD) protection
Product Summary
Overvoltage protection
Output clamp
Operating voltage
On-state resistance
Load current (ISO)
Short circuit current limitation
Current sense ratio
Vbb(AZ)
VON(CL)
Vbb(on)
RON
IL(ISO)
IL(SCp)
IL : IIS
63 V
42 V
5.0 ... 34 V
2.9 mΩ
132 A
400 A
25 000
TO-218AB/5
Application
• Power switch with current sense diagnostic
feedback for 12 V and 24 V DC grounded loads
• Most suitable for loads with high inrush current
like lamps and motors; all types of resistive and
inductive loads
• Replaces electromechanical relays, fuses and discrete circuits
5
1
Straight leads
General Description
N channel vertical power FET with charge pump, current controlled input and diagnostic feedback with load
current sense, integrated in Smart SIPMOS® chip on chip technology. Fully protected by embedded protection
functions.
Voltage
source
Voltage
sensor
2 IN
ESD
Logic
Overvoltage
protection
Current
limit
Gate
protection
R bb
Charge pump
Level shifter
Rectifier
Limit for
unclamped
ind. loads
Output
Voltage
detection
Current
Sense
3 & Tab
+ Vbb
OUT 1, 5
IL
Load
I IN
Temperature
sensor
VIN
VIS
Logic GND
I IS
IS
4
RIS
PROFET®
Load GND
1) With additional external diode.
2) Additional external diode required for energized inductive loads (see page9).
Semiconductor Group
Page 1 of 16
1998-Jan-14
1 page  
Parameter and Conditions
at Tj = -40 ... +150 °C, Vbb = 12 V unless otherwise specified
Target Data Sheet BTS555
Symbol
Values
Unit
min typ max
Thermal overload trip temperature
Thermal hysteresis
Tjt 150 -- -- °C
∆Tjt
-- 10
-- K
Reverse Battery
Reverse battery voltage 16)
On-state resistance (Pins 1,5 to pin 3)
Tj = 25 °C:
Vbb = -12V, VIN = 0, IL = - tbd (>=20) A, RIS = 1 kΩTj =
150 °C:
Integrated resistor in Vbb line
-Vbb
RON(rev)
Rbb
-- -- 16 V
-- 2.8 tbd mΩ
00
-- 120
-- Ω
Diagnostic Characteristics
Current sense ratio, static on-condition,
kILIS = IL : IIS, VON < 1.5 V17),
VIS <VOUT - 5 ??? V, VbIN > 4.5 V
-40°C: kILIS
25°C:
150°C:
see diagram on page 12
IL = 180 A:
IL = 50 A:
IL = 25 A:
IL = 10 A:
IIN = 0 (e.g. during deenergizing of inductive loads):
Sense current saturation
Current sense leakage current
IIN = 0, VIS = 0:
VIN = 0, VIS = 0, IL ≤ 0:
Current sense settling time18) after positive input
slope (90% of IIS static)
IL = 0 / tbd (>=20) A:
Current sense settling time18) after negative input
slope (10% of IIS static)
IL = tbd (>=20) / 0 A:
Current sense settling time18) after change of load
current (60% to 90%)
IL = 15 / tbd (>=20) A:
Overvoltage protection
Ibb = 15 mA
Tj =-40°C:
Tj = 25...+150°C:
IIS,lim
IIS(LL)
IIS(LH)
tson(IS)
tsoff(IS)
tslc(IS)
VbIS(Z)
-- 26 530
-- 25 430
-- 23 520
--
--
--
-40°C: +25°C: 150°C:
±4.5% ±4.2% ±4.0%
±8.9% ±7.5% ±6.1%
±15% ±12% ±9.0%
±46% ±36% ±24%
-- 0 --
6.5 -- --
mA
-- -- 0.5 µA
-- 2 --
-- tbd 500 µs
-- tbd 500 µs
-- tbd 500 µs
60 -- -- V
62 66
--
16) The reverse load current through the intrinsic drain-source diode has to be limited by the connected load
(as it is done with all polarity symmetric loads). Note that under off-conditions (IIN = IIS = 0) the power
transistor is not activated. This results in raised power dissipation due to the higher voltage drop across the
intrinsic drain-source diode. The temperature protection is not active during reverse current operation!
Increasing reverse battery voltage capability is simply possible as described on page9.
17) If VON is higher, the sense current is no longer proportional to the load current due to sense current
saturation, see IIS,lim .
18) Not tested, specified by design.
Semiconductor Group
Page 5
1998-Jan-14
5 Page 
Characteristics
Current sense versus load current:
IIS = f(IL)
IIS [mA]
6
5
4
max
3
min
2
1
0
0 50 100 150
Current sense ratio:
KILIS = f(IL), TJ = -40 °C
kilis
35000
33000
31000
29000
27000
typ
25000
23000
21000
19000
17000
15000
0
50
max
min
100 150
Target Data Sheet BTS555
Current sense ratio:
KILIS = f(IL), TJ = 25 °C
kilis
35000
33000
31000
29000
27000
25000
typ
23000
21000
19000
17000
15000
200 0
50
IL [A]
Current sense ratio:
KILIS = f(IL), TJ = 150 °C
kilis
35000
33000
31000
29000
27000
25000
23000
typ
21000
19000
17000
200
IL [A]
15000
0
50
max
min
100 150
max
min
100 150
200
IL [A]
200
IL [A]
Semiconductor Group
Page 11
1998-Jan-14
11 Page | ||
| Páginas | Total 15 Páginas | |
| PDF Descargar | [ Datasheet BTS555.PDF ] | |
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