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Infineon Technologies AG - Smart Highside High Current Power Switch

Numéro de référence BTS555E3146
Description Smart Highside High Current Power Switch
Fabricant Infineon Technologies AG 
Logo Infineon Technologies AG 





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BTS555E3146 fiche technique
PROFET® Data Sheet BTS555
Smart Highside High Current Power Switch Reversave
Reversave
Product Summary
Reverse battery protection by self turn on of
power MOSFET
Features
Overload protection
Current limitation
Overvoltage protection
Output clamp
Operating voltage
On-state resistance
Vbb(AZ)
VON(CL)
Vbb(on)
RON1)
62
44
5.0 ... 34
V
V
V
2.5 m
Short circuit protection
Overtemperature protection
Overvoltage protection (including load dump)
Clamp of negative voltage at output
Load current (ISO)
IL(ISO)
Short circuit current limitation IL(SCp)
Current sense ratio
IL : IIS
165
520
30 000
A
A
Fast deenergizing of inductive loads 2)
Low ohmic inverse current operation
TO-218AB/5
TO-218AB-5-1
Diagnostic feedback with load current sense
Open load detection via current sense
Loss of Vbb protection3)
Electrostatic discharge (ESD) protection
5
Application
Power switch with current sense diagnostic
1
Straight leads
Staggered leads
feedback for 12 V and 24 V DC grounded loads
Most suitable for loads with high inrush current
like lamps and motors; all types of resistive and inductive loads
Replaces electromechanical relays, fuses and discrete circuits
General Description
N channel vertical power FET with charge pump, current controlled input and diagnostic feedback with load
current sense, integrated in Smart SIPMOSchip on chip technology. Providing embedded protective functions.
Voltage
source
Voltage
sensor
2 IN
ESD
I IN
Logic
VIN
V IS
Logic GND
I IS
IS
4
RIS
Overvoltage
protection
Current
limit
Gate
protection
R bb
Charge pump
Level shifter
Rectifier
Limit for
unclamped
ind. loads
Output
Voltage
detection
Current
Sense
3 & Tab
+ Vbb
OUT 1, 5
IL
Load
Temperature
sensor
PROFET
Load GND
1 ) Due to the different lead frame geometry Ron @25°C is 0.3 mhigher in staggered than in straight version,
and accordingly for other temperatures.
2 ) With additional external diode.
3) Additional external diode required for energized inductive loads (see page 9).
Infineon Technologies AG
1 of 16
2003-Oct-01

PagesPages 16
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