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PDF ULBM2 Data sheet ( Hoja de datos )
| Número de pieza | ULBM2 | |
| Descripción | NPN SILICON RF POWER TRANSISTOR | |
| Fabricantes | Advanced Semiconductor | |
| Logotipo |  |
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ULBM2
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI ULBM2 is Designed for
FEATURES:
•
•
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC 0.75 A
VCBO
36 V
VCEO
16 V
VCES
36 V
VEBO
PDISS
TJ
TSTG
θJC
4.0 V
5 W @ TC = 25 OC
-65 OC to +200 OC
-65 OC to +150 OC
35 OC/W
PACKAGE STYLE .280 4L STUD
A
45°
B
D
E
F
C
J
I
G
H
K
#8-32 UNC
DIM
MINIMUM
inches / mm
MAXIMUM
inches / mm
A 1.010 / 25.65
1.055 / 26.80
B .220 / 5.59
.230 /5.84
C .270 / 6.86
.285 / 7.24
D .003 / 0.08
.007 / 0.18
E .117 / 2.97
.137 / 3.48
F .572 / 14.53
G .130 / 3.30
H .245 / 6.22
.255 / 6.48
I .640 / 16.26
J .175 / 4.45
.217 / 5.51
K .275 / 6.99
.285 / 7.24
ORDER CODE: ASI10675
CHARACTERISTICS TC = 25 OC
SYMBOL
NONETEST CONDITIONS
BVCEO
IC = 25 mA
BVCES
IC = 5.0 mA
BVEBO
IE = 1.0 mA
ICBO
VCE = 15 V
hFE
VCE = 5.0 V
IC = 100 mA
MINIMUM TYPICAL MAXIMUM
16
36
4.0
1.0
20 --- ---
UNITS
V
V
V
mA
---
Cob VCB = 12 V
f = 1.0 MHz
10 pF
PG VCC = 12.5 V POUT = 2.0 W
ηC
f = 470 MHz
10
60
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
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| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet ULBM2.PDF ] | |
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