|
|
Datasheet ULBM2TE Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | ULBM2TE | NPN SILICON RF POWER TRANSISTOR ULBM2TE
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI ULBM2TE is Designed for
PACKAGE STYLE TO-39GE
B C ØA 45°
FEATURES:
• • • Omnigold™ Metalization System
ØD E
MAXIMUM RATINGS
IC VCBO VCEO VEBO PDISS TJ TSTG θ JC
O
F
0.40 A 36 V 16 V 4.0 V 5 W @ TC = 25 OC -65 C to +200 C |  Advanced Semiconductor | transistor |
ULB Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | ULB121 | NPN SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD
ULB121
NPN SILICON TRANSISTOR
NPN TRIPLE DIFFUSED PLANAR TYPE HIGH VOLTAGE TRANSISTOR
DESCRIPTION
The UTC ULB121 is a medium power transistor designed for use in switching applications.
FEATURES
* High breakdown voltage * Low collector saturation voltage * Fa  Unisonic Technologies transistor | | |
| 2 | ULB122 | NPN SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD
ULB122
NPN SILICON TRANSISTOR
NPN TRIPLE DIFFUSED PLANAR TYPE HIGH VOLTAGE TRANSISTOR
DESCRIPTION
The UTC ULB122 is a medium power transistor designed for use in switching applications.
FEATURES
* High breakdown voltage * Low collector saturation voltage * Fa Unisonic Technologies transistor | | |
| 3 | ULB124 | NPN SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD
ULB124
NPN SILICON TRANSISTOR
NPN EPITAXIAL PLANAR TRANSISTOR
DESCRIPTION
The UTC ULB124 is designed for high voltage, high speed switching inductive circuits, and amplifier applications.
FEATURES
* High Speed Switching * Low Saturation Voltage * High Relia Unisonic Technologies transistor | | |
| 4 | ULB4132 | 30V N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD
ULB4132
Preliminary
100A, 30V N-CHANNEL POWER MOSFET
DESCRIPTION
The ULB4132 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applicatio Unisonic Technologies mosfet | | |
| 5 | ULBM05 | NPN SILICON RF POWER TRANSISTOR ULBM0.5
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI ULBM0.5 is Designed for
PACKAGE STYLE .205 4L PILL
D
FEATURES:
• • • Omnigold™ Metalization System
B A C
MAXIMUM RATINGS
IC VCBO VCEO VEBO PDISS TJ TSTG θ JC 0.4 A 28 V 12 V 4.0 V 2.5 W @ TC = 25 C -65 OC to +200 OC -65 C to + Advanced Semiconductor transistor | | |
| 6 | ULBM10 | NPN SILICON RF POWER TRANSISTOR ULBM10
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI ULBM10 is Designed for
PACKAGE STYLE .280 4L STUD FEATURES:
• • • Omnigold™ Metalization System
B A 45°
D
C J
MAXIMUM RATINGS
E
I
IC VCBO VCEO VCES VEBO PDISS TJ TSTG θ JC
O
2.5 A 36 V 16 V 36 V 4.0 V 58 W @ TC = 25 C -65 Advanced Semiconductor transistor | | |
| 7 | ULBM2 | NPN SILICON RF POWER TRANSISTOR ULBM2
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI ULBM2 is Designed for
PACKAGE STYLE .280 4L STUD FEATURES:
• • • Omnigold™ Metalization System
45° B A
D
C J
MAXIMUM RATINGS
E
I
IC VCBO VCEO VCES VEBO PDISS TJ TSTG θ JC
O
0.75 A 36 V 16 V 36 V 4.0 V 5 W @ TC = 25 C -65 C Advanced Semiconductor transistor | |
| Esta página es del resultado de búsqueda del ULBM2TE. Si pulsa el resultado de búsqueda de ULBM2TE se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
 Sanken |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |