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Panasonic Semiconductor - Silicon PNP epitaxial planer transistor

Numéro de référence UN211D
Description Silicon PNP epitaxial planer transistor
Fabricant Panasonic Semiconductor 
Logo Panasonic Semiconductor 





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UN211D fiche technique
Transistors with built-in Resistor
UN2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/
211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z
Silicon PNP epitaxial planer transistor
For digital circuits
s Features
q Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
q Mini type package, allowing downsizing of the equipment and
automatic insertion through tape packing and magazine packing.
0.65±0.15
+0.2
2.8 –0.3
+0.25
1.5 –0.05
Unit: mm
0.65±0.15
1
3
2
s Resistance by Part Number
Marking Symbol (R1)
q UN2111
6A
10k
q UN2112
6B
22k
q UN2113
6C
47k
q UN2114
6D
10k
q UN2115
6E
10k
q UN2116
6F
4.7k
q UN2117
6H
22k
q UN2118
6I
0.51k
q UN2119
6K
1k
q UN2110
6L
47k
q UN211D
6M
47k
q UN211E
6N
47k
q UN211F
6O
4.7k
q UN211H
6P
2.2k
q UN211L
6Q
4.7k
q UN211M
EI
2.2k
q UN211N
EW
4.7k
q UN211T
EY
22k
q UN211V
FC
2.2k
q UN211Z
FE
4.7k
(R2)
10k
22k
47k
47k
5.1k
10k
10k
22k
10k
10k
4.7k
47k
47k
47k
2.2k
22k
0.1 to 0.3
0.4±0.2
1:Base
2:Emitter
3:Collector
EIAJ:SC-59
Mini Type Package
Internal Connection
R1
B
R2
C
E
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
IC
PT
Tj
Tstg
Ratings
–50
–50
–100
200
150
–55 to +150
Unit
V
V
mA
mW
˚C
˚C
1

PagesPages 17
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