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Numéro de référence | UN2214 | ||
Description | Silicon NPN epitaxial planer transistor | ||
Fabricant | Panasonic Semiconductor | ||
Logo | |||
1 Page
Transistors with built-in Resistor
UN2211/2212/2213/2214/2215/2216/2217/2218/2219/2210/
221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z
Silicon NPN epitaxial planer transistor
For digital circuits
s Features
q Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
q Mini type package, allowing downsizing of the equipment and
automatic insertion through tape packing and magazine packing.
0.65±0.15
+0.2
2.8 –0.3
+0.25
1.5 –0.05
Unit: mm
0.65±0.15
1
3
2
s Resistance by Part Number
Marking Symbol (R1)
q UN2211
8A
10kΩ
q UN2212
8B
22kΩ
q UN2213
8C
47kΩ
q UN2214
8D
10kΩ
q UN2215
8E
10kΩ
q UN2216
8F
4.7kΩ
q UN2217
8H
22kΩ
q UN2218
8I
0.51kΩ
q UN2219
8K
1kΩ
q UN2210
8L
47kΩ
q UN221D
8M
47kΩ
q UN221E
8N
47kΩ
q UN221F
8O
4.7kΩ
q UN221K
8P
10kΩ
q UN221L
8Q
4.7kΩ
q UN221M
EL
2.2kΩ
q UN221N
EX
4.7kΩ
q UN221T
EZ
22kΩ
q UN221V
FD
2.2kΩ
q UN221Z
FF
4.7kΩ
(R2)
10kΩ
22kΩ
47kΩ
47kΩ
—
—
—
5.1kΩ
10kΩ
—
10kΩ
22kΩ
10kΩ
4.7kΩ
4.7kΩ
47kΩ
47kΩ
47kΩ
2.2kΩ
22kΩ
0.1 to 0.3
0.4±0.2
1:Base
2:Emitter
3:Collector
EIAJ:SC-59
Mini Type Package
Internal Connection
R1
B
R2
C
E
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
IC
PT
Tj
Tstg
Ratings
50
50
100
200
150
–55 to +150
Unit
V
V
mA
mW
˚C
˚C
1
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Pages | Pages 17 | ||
Télécharger | [ UN2214 ] |
No | Description détaillée | Fabricant |
UN2210 | Silicon NPN epitaxial planer transistor | Panasonic Semiconductor |
UN2211 | Silicon NPN epitaxial planar transistor | Panasonic Semiconductor |
UN2212 | Silicon NPN epitaxial planer transistor | Panasonic Semiconductor |
UN2213 | Silicon NPN epitaxial planar transistor | Panasonic Semiconductor |
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