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VWI20-06P1 fiches techniques PDF

IXYS Corporation - IGBT Module

Numéro de référence VWI20-06P1
Description IGBT Module
Fabricant IXYS Corporation 
Logo IXYS Corporation 





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VWI20-06P1 fiche technique
VWI 20-06P1
IGBT Module
Sixpack in ECO-PAC 2
I = 19 A
C25
VCES
= 600 V
VCE(sat) typ. = 1.9 V
Preliminary data
S 9 K 12
L9
N 9 X 18
NTC
N 5 R 5 W 14
J 13
A5
D5
H5
C 1 K 10
A1
F3
G1
Pin arangement see outlines
IGBTs
Symbol
VCES
VGES
IC25
IC80
ICM
VCEK
tSC
(SCSOA)
Ptot
Symbol
Conditions
Maximum Ratings
TVJ = 25°C to 150°C
600 V
± 20 V
TC = 25°C
TC = 80°C
VGE
=
±15
V;
R
G
=
82
;
TVJ
=
125°C
RBSOA, Clamped inductive load; L = 100 µH
VCE = 720 V; VGE = ±15 V; RG = 82 ; TVJ = 125°C
non-repetitive
19
14
20
VCES
10
A
A
A
µs
TC = 25°C
73 W
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
Features
• NPT IGBT's
- positive temperature coefficient of
saturation voltage
- fast switching
• FRED diodes
- fast reverse recovery
- low forward voltage
• Industry Standard Package
- solderable pins for PCB mounting
- isolated DCB ceramic base plate
Typical Applications
• AC drives
• power supplies with power factor
correction
V
CE(sat)
VGE(th)
ICES
IGES
td(on)
t
r
td(off)
t
f
Eon
Eoff
C
ies
QGon
RthJC
R
thJH
I
C
=
10
A;
V
GE
=
15
V;
TVJ
=
25°C
TVJ = 125°C
IC = 0.35 mA; VGE = VCE
VCE = VCES;
VGE = 0 V; TVJ = 25°C
TVJ = 125°C
VCE = 0 V; VGE = ± 20 V
Inductive load, TVJ = 125°C
VCE = 300 V; IC = 10 A
V
GE
=
±15
V;
R
G
=
82
1.9 2.4 V
2.2 V
4.5 6.5 V
0.6 mA
2.7 mA
100 nA
35 ns
35 ns
230 ns
30 ns
0.4 mJ
0.3 mJ
V = 25 V; V = 0 V; f = 1 MHz
CE GE
VCE = 300 V; VGE = 15 V; IC = 10 A
(per IGBT)
with heatsink compound (0.42 K/m.K; 50 µm)
600 pF
39 nC
1.7 K/W
3.4 K/W
IXYS reserves the right to change limits, test conditions and dimensions.
© 2003 IXYS All rights reserved
IXYS Semiconductor GmbH
Edisonstr. 15, D-68623 Lampertheim
Phone: +49-6206-503-0, Fax: +49-6206-503627
www.ixys.net
1-5
IXYS Corporation
3540 Bassett Street, Santa Clara CA 95054
Phone: (408) 982-0700, Fax: 408-496-0670

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