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VWM350-0075P fiches techniques PDF

IXYS Corporation - Three phase full bridge with Trench MOSFETs

Numéro de référence VWM350-0075P
Description Three phase full bridge with Trench MOSFETs
Fabricant IXYS Corporation 
Logo IXYS Corporation 





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VWM350-0075P fiche technique
VWM 350-0075P
Three phase full bridge
with Trench MOSFETs
VDSS = 75 V
RDSon = 2.3 m
ID25 = 340 A
Preliminary data
L+
T1
T2
T3
G1 G3 G5
S1
T4
G2
S3
T5
G4
S5
T6
G6
L1
L2
L3
S2 S4 S6
L-
MOSFETs T1 - T6
Symbol
VDSS
VGS
ID25
ID80
ID25
ID80
Conditions
TVJ = 25°C to 150°C
TC = 25°C
TC = 80°C
TC = 25°C (diode)
TC = 80°C (diode)
Maximum Ratings
75 V
±20 V
340 A
250 A
340 A
250 A
Applications
AC drives
• in automobiles
- electric power steering
- starter generator
- etc...
• in industrial vehicles
- propulsion drives
- fork lift drives
• in battery supplied equipment
Symbol
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
RDSon
VGS = 10 V; ID = ID80
2.3
VGSth
VDS = 20 V; ID = 2 mA
2
IDSS VDS = 75V; VGS = 0 V; TVJ = 25°C
TVJ = 125°C
0.25
IGSS VGS = ±20 V; VDS = 0 V
Qg 450
Q
gs
Qgd
VGS= 10 V; VDS = 0.5 • VDSS; ID = 175A
60
170
td(on)
t
r
td(off)
t
f
VGS= 10 V; VDS = 0.5 • VDSS;
ID = 175 A; RG = 2.2
60
170
320
200
VF (diode) IF = 175 A; VGS= 0 V
1.1
trr
(diode) IF = 40 A; -di/dt = 200 A/µs; VDS= 30 V
90
RthJC
R
thJH
with heat transfer paste
Ratings and characteristic values are per individual MOSFET
0.51
IXYS reserves the right to change limits, test conditions and dimensions.
3.3 m
4V
0.02 mA
mA
0.2 µA
nC
nC
nC
ns
ns
ns
ns
1.6 V
ns
0.26 K/W
K/W
Features
• MOSFETs in trench technology:
- low RDSon
- optimized intrinsic reverse diode
• package:
- high level of integration
- solder terminals for PCB mounting
- isolated DCB ceramic base plate
with optimized heat transfer
© 2003 IXYS All rights reserved
1-2
IXYS Semiconductor GmbH
Edisonstr. 15, D-68623 Lampertheim
Phone: +49-6206-503-0, Fax: +49-6206-503627
IXYS Corporation
3540 Bassett Street, Santa Clara CA 95054
Phone: (408) 982-0700, Fax: 408-496-0670

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