|
|
Numéro de référence | ZUMT5179 | ||
Description | NPN SILICON PLANAR HIGH FREQUENCY TRANSISTOR | ||
Fabricant | Zetex Semiconductors | ||
Logo | |||
1 Page
SOT323 NPN SILICON PLANAR
HIGH FREQUENCY TRANSISTOR
ISSUE 1- NOVEMBER 1998
FEATURES
* High fT=900MHz Min
* Max capacitance=1pF
* Low noise 4.5dB
PARTMARKING DETAIL - T6
ZUMT5179
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
20 V
Collector-Emitter Voltage
VCEO
12 V
Emitter-Base Voltage
VEBO
2.5 V
Continuous Collector Current IC 50 mA
Power Dissipation
Ptot 330 mW
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN.
MAX. UNIT CONDITIONS.
Collector-Emitter Sustaining
Voltage
Collector-Base Breakdown
Voltage
VCEO(SUS)
V(BR)CBO
12
20
V IC= 3mA, IB=0
V IC= 1µA, IE=0
Emitter-Base Breakdown
Voltage
V(BR)EBO
2.5
V IE=10µA, IC=0
Collector Cut-Off
Current
ICBO
0.02
1.0
µA VCB=15V, IE=0
µA VCB=15V, IE=0, Tamb=150°C
Static Forward Current
Transfer Ratio
hFE
25 250
IC=3mA, VCE=1V
Collector-Emitter Saturation VCE(sat)
Voltage
0.4 V IC=10mA, IB=1mA
Base-Emitter
Saturation Voltage
VBE(sat)
Transition Frequency
Collector-Base Capacitance
Small Signal Current Gain
Collector Base Time Constant
Noise Figure
fT
Ccb
hfe
rb’Cc
NF
900
25
3
1.0
2000
1
300
14
4.5
Common-Emitter Amplifier Gpe
Power Gain
15
Spice parameter data is available upon request for this device
V IC=10mA, IB=1mA
MHz
pF
ps
dB
dB
IC=5mA, VCE=6V, f=100MHz
IE=0, VCB=10V, f=1MHz
IC=2mA, VCE=6V, f=1KHz
IE=2mA, VCB=6V, f=31.9MHz
IC=1.5mA, VCE=6V
RS=50Ω, f=200MHz
IC=5mA, VCE=6V
f=200MHz
|
|||
Pages | Pages 2 | ||
Télécharger | [ ZUMT5179 ] |
No | Description détaillée | Fabricant |
ZUMT5179 | NPN SILICON PLANAR HIGH FREQUENCY TRANSISTOR | Zetex Semiconductors |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |