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PDF ZUMT918 Data sheet ( Hoja de datos )
| Número de pieza | ZUMT918 | |
| Descripción | NPN SILICON PLANAR VHF/UHF TRANSISTOR | |
| Fabricantes | Zetex Semiconductors | |
| Logotipo |  |
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SOT323 NPN SILICON PLANAR
VHF/UHF TRANSISTOR
ISSUE 1 – DECEMBER 1998
PARTMARKING DETAIL – T5
ZUMT918
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Continuous Collector Current
IC
Power Dissipation at Tamb=25°C
Ptot
Operating and Storage Temperature Range
Tj:Tstg
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER
SYMBOL MIN. TYP. MAX.
30
15
3
100
330
-55 to +150
V
V
V
mA
mW
°C
UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO
30
V IC=1µA, IE=0
Collector-Emitter
Sustaining Voltage
VCEO(sus) 15
V IC=3mA, IB=0*
Emitter-Base
Breakdown Voltage
V(BR)EBO
3
V IE=10µA, IC=0
Collector Cut-Off Current ICBO
Collector-Emitter
Saturation Voltage
VCE(sat)
0.05 µA
0.4 V
VCB=15V, IE=0
IC=10mA, IB=1mA
Base-Emitter
Saturation Voltage
VBE(sat)
1.0 V
IC=10mA, IB=1mA
Static Forward Current hFE
Transfer Ratio
20
IC=3mA, VCE=1V
Transition Frequency
fT
600
MHz
IC=4mA, VCE=10V
f=100MHz
Output Capacitance
Input Capacitance
Noise Figure
Cobo
Cibo
N
3.0 pF
1.7 pF
1.6 pF
6.0 dB
Common Emitter
Power Gain
Gpe
15 dB
*Measured under pulsed conditions. Pulse Width=300µs. Duty cycle ≤2%
Spice parameter data is available upon request for this device
VCB=0V, f=1MHz
VCB=10V, f=1MHz
VEB=0.5V,f=1MHz
VCE=6V, IC=1mA
f=60MHz, RG=400Ω
VCB=12V, IC=6mA
f=200MHz
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