|
|
Numéro de référence | ZUMTQ31A | ||
Description | NPN SILICON PLANAR VHF/UHF TRANSISTORS | ||
Fabricant | Zetex Semiconductors | ||
Logo | |||
SOT323 NPN SILICON PLANAR
VHF/UHF TRANSISTORS
ISSUE 1 – DECEMBER 1998
PARTMARKING DETAIL
– T11
ZUMTQ31A
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Continuous Collector Current
IC
Base Current
IB
Power Dissipation at Tamb=25°C
Ptot
Operating and Storage Temperature Range Tj:Tstg
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER
SYMBOL MIN. MAX. UNIT
30
15
3
100
50
330
-55 to +150
CONDITIONS.
V
V
V
mA
mA
mW
°C
Collector-Base
Breakdown Voltage
V(BR)CBO 30
V IC=1.0µA, IE=0
Collector-Emitter
Breakdown Voltage
V(BR)CEO 15
V IC=3mA, IB=0*
Emitter-Base
Breakdown Voltage
V(BR)EBO 3
V IE=10µA, IC=0
Collector Cut-Off
Current
ICBO
0.01
µA
VCB=15V, IE=0
Collector-Emitter
Saturation Voltage
VCE(sat)
0.4 V
IC=10mA, IB=1mA
Base-Emitter
Saturation Voltage
VBE(sat)
1.0 V
IC=10mA, IB=1mA
Static Forward Current hFE
Transfer Ratio
100
IC=3mA, VCE=1V
Transition
Frequency
fT 600
MHz
IC=4mA, VCE=10V
f=100MHz
Collector-Base
Capacitance
Cobo
1.7 pF
VCB=10V, f=1MHz
Input Capacitance
Cibo
2.0 pF
VCB=0.5V, f=1MHz
Noise Figure
N
6.0 dB IC=1mA, VCE=6V
Rs=400Ω, f=60MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
Spice parameter data is available upon request for this device
|
|||
Pages | Pages 1 | ||
Télécharger | [ ZUMTQ31A ] |
No | Description détaillée | Fabricant |
ZUMTQ31A | NPN SILICON PLANAR VHF/UHF TRANSISTORS | Zetex Semiconductors |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |