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PDF ZUMTS17 Data sheet ( Hoja de datos )
| Número de pieza | ZUMTS17 | |
| Descripción | NPN SILICON PLANAR RF TRANSISTORS | |
| Fabricantes | Zetex Semiconductors | |
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SOT323 NPN SILICON PLANAR
RF TRANSISTORS
ISSUE 1 – DECEMBER 1998
PARTMARKING DETAIL — ZUMTS17 - T4
ZUMTS17H - T4H
ZUMTS17
ZUMTS17H
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Peak Pulse Current
ICM
Continuous Collector Current
IC
Power Dissipation at Tamb=25°C
Ptot
Operating and Storage Temperature Range Tj:Tstg
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER
SYMBOL MIN. TYP. MAX.
VALUE
25
15
2.5
50
25
330
-55 to +150
UNIT
V
V
V
mA
mA
mW
°C
UNIT CONDITIONS.
Collector Cut-Off
Current
ICBO
Static Forward Current hFE
Transfer Ratio
ZUMTS17H
Transition
Frequency
fT
10 nA VCB=10V, IE=0
10 µA VCB=10V, IE=0,
Tamb = 100°C
25 150 IC=2.0mA, VCE=1.0V
20 125 IC=25mA, VCE=1.0V
70 200 IC=2.0mA, VCE=1.0V
1.0 GHz IC=2.0mA, VCE=5.0V
f=500MHz
1.3 GHz IC=25mA, VCE=5.0V
f=500MHz
Feedback Capacitance -Cre
Collector Capacitance CTc
0.85
1.5
pF IC=2.0mA, VCE=5V, f=1MHz
pF IE=Ie=0, VCB=10V,
f=1MHz
Emitter Capacitance
CTe
2.0 pF IC=Ic=0, VEB=5.0V,
f=1MHz
Noise Figure
Intermodulation
Distortion
N
dim
4.5 dB
-45 dB
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
Spice parameter data is available upon request for this device
IC=2.0mA, VCE=5.0V
RS=50Ω, f=500MHz
IC=10mA, VCE=6.0V
RL=37.5Ω,Tamb=25°C
Vo=100mV at fp=183MHz
Vo=100mV at fq=200MHz
measured at f(2q-p)=217MHz
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet ZUMTS17.PDF ] | |
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