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PDF ZVN3306F Data sheet ( Hoja de datos )
| Número de pieza | ZVN3306F | |
| Descripción | N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET | |
| Fabricantes | Zetex Semiconductors | |
| Logotipo |  |
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SOT23 N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 3 – JANUARY 1996
FEATURES
* RDS(on)= 5Ω
* 60 Volt VDS
COMPLEMENTARY TYPE - ZVP3306F
PARTMARKING DETAIL - MC
ZVN3306F
S
D
G
ABSOLUTE MAXIMUM RATINGS.
SOT23
PARAMETER
SYMBOL
VALUE
UNIT
Drain-Source Voltage
VDS 60 V
Continuous Drain Current at Tamb=25°C
ID
150 mA
Pulsed Drain Current
IDM 3 A
Gate-Source Voltage
VGS ± 20 V
Power Dissipation at Tamb=25°C
Ptot
330 mW
Operating and Storage Temperature Range Tj:Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source
Breakdown Voltage
BVDSS
60
V ID=1mA, VGS=0V
Gate-Source Threshold
Voltage
VGS(th) 0.8 2.4 V
ID=1mA, VDS= VGS
Gate-Body Leakage
Zero Gate Voltage
Drain Current
IGSS
IDSS
20
0.5
50
On-State Drain Current(1)
ID(on)
750
Static Drain-Source On-State RDS(on)
Resistance (1)
5
nA VGS=± 20V, VDS=0V
µA VDS=60V, VGS=0V
µA VDS=48V, VGS=0V, T=125°C(2)
mA VDS=18V, VGS=10V
Ω VGS=10V, ID=500mA
Forward Transconductance
(1)(2)
gfs
150
mS VDS=18V, ID=500mA
Input Capacitance (2)
Common Source
Output Capacitance (2)
Ciss
Coss
35 pF
25 pF VDS=18V, VGS=0V, f=1MHz
Reverse Transfer Capacitance Crss
(2)
8 pF
Turn-On Delay Time (2)(3)
td(on)
3 typ 5
ns
Rise Time (2)(3)
Turn-Off Delay Time (2)(3)
tr
td(off)
4 typ 7
4 typ 6
ns VDD ≈18V, ID=500mA
ns
Fall Time (2)(3)
tf
5 typ 8
ns
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test.
(3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator
Spice parameter data is available upon request for this device
3 - 393
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet ZVN3306F.PDF ] | |
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