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PDF ZVP1320F Data sheet ( Hoja de datos )
| Número de pieza | ZVP1320F | |
| Descripción | P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET | |
| Fabricantes | Zetex Semiconductors | |
| Logotipo |  |
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SOT23 P-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 3 JANUARY 1996
FEATURES
* VDS - 200V
7
PARTMARKING DETAIL - MT
ZVP1320F
S
D
G
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Drain-Source Voltage
VDS -200 V
Continuous Drain Current at Tamb=25°C
ID
-35 mA
Pulsed Drain Current
IDM -400 mA
Gate Source Voltage
VGS ± 20 V
Power Dissipation at Tamb=25°C
Ptot
330 mW
Operating and Storage Temperature Range Tj:Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source Breakdown
Voltage
BVDSS -200
V ID=-1mA, VGS=0V
Gate-Source Threshold
Voltage
VGS(th) -1.5 -3.5 V
ID=-1mA, VDS= VGS
Gate-Body Leakage
Zero Gate Voltage Drain
Current
IGSS
IDSS
20 nA VGS=± 20V, VDS=0V
-10 µA VDS=-200V, VGS=0V
-50 µA VDS=-160V, VGS=0V,
T=125°C(2)
On-State Drain Current(1)
ID(on)
Static Drain-Source On-State RDS(on)
Resistance (1)
-100
80
mA VDS=-25V, VGS=-10V
Ω VGS=-10V, ID=-50mA
Forward Transconductance gfs
(1)(2)
25
mS VDS=-25V, ID=-50mA
Input Capacitance (2)
Common Source Output
Capacitance (2)
Ciss
Coss
50 pF
15 pF VDS=-25V, VGS=0V, f=1MHz
Reverse Transfer Crss 5 pF
Capacitance (2)
Turn-On Delay Time (2)(3)
Rise Time (2)(3)
Turn-Off Delay Time (2)(3)
Fall Time (2)(3)
td(on)
tr
td(off)
tf
8 ns
8 ns VDD≈-25V, ID=-50mA
8 ns
16 ns
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test.
(3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator
3 - 423
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet ZVP1320F.PDF ] | |
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