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Numéro de référence | ZVP2106B | ||
Description | P CHANNEL ENHANCEMENT MODE DMOS FET | ||
Fabricant | Seme LAB | ||
Logo | |||
ZVP2106B
MECHANICAL DATA
Dimensions in mm (inches)
P CHANNEL ENHANCEMENT
MODE DMOS FET
4.19 (0.165)
4.95 (0.195)
8.89 (0.35)
9.40 (0.37)
7.75 (0.305)
8.51 (0.335)
12.70
(0.500)
min.
0.89 max.
(0.035)
7.75 (0.305)
8.51 (0.335)
dia.
5.08 (0.200)
typ.
0.66 (0.026)
1.14 (0.045)
0.71 (0.028)
0.86 (0.034)
2
13
45°
Pin 1 – Source
TO39
Pin 2 – Gate
BVDSS
ID(cont)
RDS(on)
- 60V
0.76A
0.5Ω
2.54
(0.100)
Pin 3 – Drain
FEATURES
• FAST SWITCHING SPEEDS
• NO SECONDARY BREAKDOWN
• EXCELLENT TEMPERATURE STABILITY
• HIGH INPUT IMPEDANCE
• LOW CURRENT DRIVE
• EASE OF PARALLELING
ABSOLUTE MAXIMUM RATINGS(Tcase = 25°C unless otherwise stated)
VGS Gate – Source Voltage
VDS Drain – Source Voltage
ID Continuous Drain Current (VGS = 10V , Tcase = 25°C)
ID Continuous Drain Current (VGS = 10V , Tcase = 100°C)
IDM Pulsed Drain Current
PD Power Dissipation @ TA = 25°C
PD Power Dissipation @ TC = 25°C
TJ , Tstg
Operating and Storage Temperature Range
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
±20
-60V
0.28A
-0.76A
-4A
0.7W
5W
–55 to 150°C
11/99
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Pages | Pages 2 | ||
Télécharger | [ ZVP2106B ] |
No | Description détaillée | Fabricant |
ZVP2106A | P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET | Zetex Semiconductors |
ZVP2106B | P CHANNEL ENHANCEMENT MODE DMOS FET | Seme LAB |
ZVP2106C | P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET | Zetex Semiconductors |
ZVP2106G | P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET | Zetex Semiconductors |
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