ZVP2110G Datasheet PDF - Zetex Semiconductors
| Part Number | ZVP2110G | |
| Description | P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET | |
| Manufacturers | Zetex Semiconductors | |
| Logo |  |
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SOT223 P-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 MARCH 94
FEATURES
* 100 Volt VDS
* RDS(on)=8Ω
7
ZVP2110G
D
COMPLEMENTARY TYPE ZVN2110G
S
PARTMARKING DETAIL ZVP2110
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-Source Voltage
Continuous Drain Current at Tamb=25°C
Pulsed Drain Current
Gate Source Voltage
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
SYMBOL
VDS
ID
IDM
VGS
Ptot
Tj:Tstg
VALUE
-100
-310
-3
± 20
2
-55 to +150
D
G
UNIT
V
mA
A
V
W
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source Breakdown
Voltage
BVDSS -100
V ID=-1mA, VGS=0V
Gate-Source Threshold
Voltage
VGS(th) -1.5 -3.5 V
ID=-1mA, VDS= VGS
Gate-Body Leakage
Zero Gate Voltage Drain
Current
IGSS
IDSS
On-State Drain Current(1)
ID(on)
Static Drain-Source On-State RDS(on)
Resistance (1)
-750
20
-1
-100
8
nA
µA
µA
mA
Ω
VGS=± 20V, VDS=0V
VDS=-100 V, VGS=0
VDS=-80 V, VGS=0V, T=125°C(2)
VDS=-25 V, VGS=-10V
VGS=-10V,ID=-375mA
Forward Transconductance gfs
(1)(2)
125
mS VDS=-25V,ID=-375mA
Input Capacitance (2)
Common Source Output
Capacitance (2)
Ciss
Coss
100 pF
35 pF
VDS=-25V, VGS=0V, f=1MHz
Reverse Transfer Crss 10 pF
Capacitance (2)
Turn-On Delay Time (2)(3)
Rise Time (2)(3)
Turn-Off Delay Time (2)(3)
Fall Time (2)(3)
td(on)
tr
td(off)
tf
7 ns
15 ns VDD≈-25V, ID=-375mA
12 ns
15 ns
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test.
3 - 429
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for ZVP2110G electronic component. |
| Information | Total 2 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ ZVP2110G.PDF Datasheet ] | |
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