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PDF K2139 Data sheet ( Hoja de datos )
| Número de pieza | K2139 | |
| Descripción | MOS Field Effect Transistor | |
| Fabricantes | NEC | |
| Logotipo |  |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2139
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK2139 is N-Channel Power MOS Field Effect Transistor
designed for high voltage switching applications.
FEATURES
• Low On-Resistance
RDS(on) = 1.5 Ω MAX. (VGS = 10 V, ID = 2.5 A)
• Low Ciss Ciss = 930 pF TYP.
• High Avalanche Capability Ratings
• Isolate TO-220 (MP-45F) Package
PACKAGE DIMENSIONS
(in millimeters)
10.0±0.3
4.5±0.2
3.2±0.2
2.7±0.2
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage
VDSS 600 V
Gate to Source Voltage
VGSS
±30
V
Drain Current (DC)
ID(DC)
±5.0
A
Drain Current (pulse)*
ID(pulse) ±20
A
Total Power Dissipation (Tc = 25 ˚C)
PT1
35 W
Total Power Dissipation (TA = 25 ˚C)
PT2
2.0 W
Channel Temperature
Tch 150 ˚C
Storage Temperature
Tstg –55 to +150 ˚C
Single Avalanche Current**
IAS 5.0 A
Single Avalanche Energy**
EAS 8.3 mJ
* PW ≤ 10 µs, Duty Cycle ≤ 1 %
** Starting Tch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0
0.7±0.1
2.54
1.3±0.2
1.5±0.2
2.54
123
2.5±0.1
0.65±0.1
1. Gate
2. Drain
3. Source
MP-45F (ISOLATED TO-220)
Drain
Gate
Body
Diode
Source
Document No. TC-2512
(O. D. No. TC-8071)
Date Published January 1995 P
Printed in Japan
© 1995
1 page  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
VGS = 10 V
Pulsed
2.0
ID = 2.5 A
1.0
0
–50
10 000
1 000
0 50 100
Tch - Channel Temperature - ˚C
150
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
VGS = 0 V
f = 1 MHz
Ciss
100
10
Coss
Crss
1
0.1 1.0 10 100 1 000
VDS - Drain to Source Voltage - V
DYNAMIC INPUT CHARACTERISTICS
800
VDS = 450 V
600 300 V
150 V
16
ID = ID (DC)
14
12
10
400 8
VGS
6
200
VDS
4
2
0
0 10 20 30 40
Qg - Gate Charge - nC
2SK2139
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
100
Pulsed
10
10 V
VGS = 0 V
1.0
0.1
0
0.5 1.0 1.5
VSD - Source to Drain Voltage - V
2.0
1 000
100
10
SWITCHING CHARACTERISTICS
tr
tf
td (on)
td (off)
VDD = 150 V
VGS = 10 V
1.0 RG = 10 Ω
1.0
10
ID - Drain Current - A
100
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
800 di/dt = 50 A/µs
VGS = 0
600
400
200
0
0.1
1.0 10
ID - Drain Current - A
100
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet K2139.PDF ] | |
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