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Numéro de référence | EG1A | ||
Description | Silicon Diode | ||
Fabricant | Sanken electric | ||
Logo | |||
1 Page
SANKEN ELECTRIC CO., LTD.
EG1A
1. Scope
The present specifications shall apply to Sanken silicon diode, EG01.
2. Outline
Type
Silicon Diode
Structure
Resin Molded
Flammability : UL94V-0 (Equivalent)
Applications
High Frequency Rectification
3.Absolute maximum ratings
No. Item
1 Transient Peak Reverse Voltage
2 Peak Reverse Voltage
3 Average Forward Current
4 Peak Surge Forward Current
5 I2t Limiting Value
6 Junction Temperature
7 Storage Temperature
Symbol Unit
VRSM
VRM
IF(AV)
IFSM
I2t
V
V
A
A
A2s
Tj °C
Tstg °C
Rating
600
600
0.6
10
0.5
-40~+150
-40~+150
Conditions
Refer to Derating of 6
10msec.
Half sinewave, one shot
1msec≤ t≤ 10msec
4.Electrical characteristics (Ta=25°C, unless otherwise specified)
No. Item
Symbol Unit
Value
1 Forward Voltage Drop
2 Reverse Leakage Current
VF V
IR µA
2.0 max.
100 max.
3
Reverse Leakage Current Under
High Temperature
H・IR
µA
500 max.
4 Reverse Recovery Time
5 Thermal Resistance
trr-1 ns
trr-2 ns
Rth(j-l) °C/W
100 max.
50 max.
17 max.
Conditions
IF=0.6A
VR=VRM
VR=VRM, Tj=100°C
IF=IRP=100mA
90% Recovery point, Tj=25°C
IF=100mA,IRP=200mA
75% Recovery point, Tj=25°C
Between Junction and Lead
041201
1/4
61426-01
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Pages | Pages 4 | ||
Télécharger | [ EG1A ] |
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