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PDF LT1001A Data sheet ( Hoja de datos )
| Número de pieza | LT1001A | |
| Descripción | NPN SILICON HIGH FREQUENCY TRANSISTOR | |
| Fabricantes | Advanced Semiconductor | |
| Logotipo |  |
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LT1001A
NPN SILICON HIGH FREQUENCY TRANSISTOR
DESCRIPTION:
The ASILT1001A is a High
Frequency Transistor Designed for
High Gain Low Noise CATV, and
MATV Amplifier Applications.
PACKAGE STYLE TO-39
B
ØA
C
45°
ØD
E
F
GH
MAXIMUM RATINGS
IC 200 mA
VCE
PDISS
20 V
2.5 W @ TC = 50 OC
TJ -65 °C to +200 °C
TSTG
-65 °C to +200 °C
θJC 70 °C/W
DIM
MINIMUM
inches / mm
MAXIMUM
inches / mm
A .200 / 5.080
B .029 / 0.740
.045 / 1.140
C .028 / 0.720
.034 / 0.860
D .335 / 8.510
.370 / 9.370
E .305 / 7.750
.335 / 8.500
F .240 / 6.100
.260 / 6.600
G .500 / 12.700
H .016 / 0.407
.020 / 0.508
1 = EMITTER 2 = BASE
3 = COLLECTOR(CASE)
CHARACTERISTICS TA = 25 °C
SYMBOL
TEST CONDITIONS
BVCEO
IC = 5.0 mA
BVCBO
IC = 1.0 mA
BVEBO
IE = 100 µA
ICBO
VCB = 10 V
hFE VCE = 5.0 V IC = 50 mA
VCE(SAT)
IC = 50 mA
IB = 5.0 mA
ft
VCE = 14 V
IC = 90 mA
f = 300 MHz
Ccb VCB = 10 V
f = 1.0 MHz
NF
GUmax
VCE = 8.0 V
VCE = 14 V
IC = 50 mA
IC = 90 mA
f = 300 MHz
f = 300 MHz
MINIMUM
20
40
3.5
70
NONE
TYPICAL MAXIMUM
50
300
500
3.0
1.6
2.5
15
UNITS
V
V
V
µA
---
mV
GHz
pF
dB
dB
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
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| PDF Descargar | [ Datasheet LT1001A.PDF ] | |
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