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Hitachi Semiconductor - MOS FET Power Amplifier Module for AMPS Handy Phone

Numéro de référence PF00105A
Description MOS FET Power Amplifier Module for AMPS Handy Phone
Fabricant Hitachi Semiconductor 
Logo Hitachi Semiconductor 





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PF00105A fiche technique
PF00105A
MOS FET Power Amplifier Module
for AMPS Handy Phone
Features
Low voltage operation : 4.6 V
2 stage amplifier : +8 dBm input
Lead less small package : 0.2 cc
High efficiency : 48% Typ at 1 W
Low power control current : 500 µA Typ
Pin Arrangement
RF-K
4 GG 3
G2
1G
1: Pin
2: Vapc
3: Vdd
4: Pout
G: GND
Absolute Maximum Ratings (Tc = 25°C)
Item
Supply voltage
Supply current
VAPC voltage
Input power
Operating case temperature
Storage temperature
Output power
Symbol
VDD
I DD
VAPC
Pin
Tc (op)
Tstg
Pout
Rating
10
1
4.5
20
–30 to +100
–30 to +100
2
ADE-208-447C (Z)
4th Edition
February 1998
Unit
V
A
V
mW
°C
°C
W

PagesPages 11
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