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PDF PF0032 Data sheet ( Hoja de datos )
| Número de pieza | PF0032 | |
| Descripción | MOS FET Power Amplifier | |
| Fabricantes | Hitachi Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de PF0032 (archivo pdf) en la parte inferior de esta página. Total 19 Páginas | ||
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PF0030 Series
MOS FET Power Amplifier
Features
• High stability: Load VSWR = 20 : 1
• Low power control current: 400 µA
• Thin package: 5 mmt
Ordering Information
Type No
PF0030
PF0032
Operating Frequency
824 to 849 MHz
872 to 905 MHz
Pin Arrangement
• RF-B2
2
51
ADE-208-460 (Z)
1st Edition
July 1996
Application
AMPS
E-TACS
5
4
3
1: Pin
2: VAPC
3: VDD
4: Pout
5: GND
1 page  
PF0030 Series
Note for Use
• Unevenness and distortion at the surface of the heatsink attached module should be less than 0.05 mm.
• It should not be existed any dust between module and heatsink.
• MODULE should be separated from PCB less than 1.5 mm.
• Soldering temperature and soldering time should be less than 230°C, 10 sec.
(Soldering position spaced from the root point of the lead frame: 2 mm)
• Recommendation of thermal joint compounds is TYPE G746.
(Manufacturer: Shin-Etsu Chemical, Co., Ltd.)
• To protect devices from electro-static damage, soldering iron, measuring-equipment and human body etc.
should be grounded.
• Torque for screw up the heatsink flange should be 4 to 6 kg · cm with M3 screw bolts.
• Don’t solder the flange directly.
• It should make the lead frame as straight as possible.
• The module should be screwed up before lead soldering.
• It should not be given mechanical and thermal stress to lead and flange of the module.
• When the external parts (Isolator, Duplexer, etc.) of the module are changed, the electrical characteristics
should be evaluated enough.
• Don’t washing the module except lead pins.
• To get good stability, ground impedance between the module GND flange and PCB GND pattern should
be designed as low as possible.
5
5 Page 
PF0030 (cont)
Pout vs. TC (1)
f = 824 MHz
VDD = 12.5 V
20 Pin = 2 mW
VAPC = 7.0 V
10
PF0030 Series
0
−40 0
40 80 120
Case Temperature TC (°C)
Pout vs. TC (2)
f = 849 MHz
VDD = 12.5 V
20 Pin = 2 mW
VAPC = 7.0 V
10
0
−40 0
40 80 120
Case Temperature TC (°C)
11
11 Page | ||
| Páginas | Total 19 Páginas | |
| PDF Descargar | [ Datasheet PF0032.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| PF0030 | MOS FET Power Amplifier | Hitachi Semiconductor |
| PF0031 | MOS FET Power Amplifier Module |  Hitachi |
| PF0032 | MOS FET Power Amplifier | Hitachi Semiconductor |
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