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What is PF01412?

This electronic component, produced by the manufacturer "Hitachi Semiconductor", performs the same function as "MOS FET Power Amplifier Module for E-GSM Handy Phone".


PF01412 Datasheet PDF - Hitachi Semiconductor

Part Number PF01412
Description MOS FET Power Amplifier Module for E-GSM Handy Phone
Manufacturers Hitachi Semiconductor 
Logo Hitachi Semiconductor Logo 


There is a preview and PF01412 download ( pdf file ) link at the bottom of this page.





Total 4 Pages



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No Preview Available ! PF01412 datasheet, circuit

PF01412A
MOS FET Power Amplifier Module
for E-GSM Handy Phone
Application
For GSM class4 890 to 915 MHz
For 5.5V nominal DC/DC converter use
Features
High gain 3stage amplifier : 0 dBm input
Lead less thin & Small package : 2 mm Max, 0.2cc
High efficiency : 45% Typ at 3.8 W
Wide gain control range : 90 dB Typ
Pin Arrangement
RF-K
4 GG 3
G2
1G
1: Pin
2: Vapc
3: Vdd
4: Pout
G: GND
Absolute Maximum Ratings (Tc = 25°C)
Item
Supply voltage
Supply current
VAPC voltage
Input power
Operating case temperature
Storage temperature
Output power
Symbol
VDD
I DD
VAPC
Pin
Tc (op)
Tstg
Pout
Rating
10
3
4
10
–30 to +100
–30 to +100
6
ADE-208-477B (Z)
3rd Edition
February 1997
Unit
V
A
V
mW
°C
°C
W


Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for PF01412 electronic component.


Information Total 4 Pages
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Download [ PF01412.PDF Datasheet ]

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Featured Datasheets

Part NumberDescriptionMFRS
PF01410The function is MOS FET Power Amplifier Module for GSM Handy Phone. Hitachi SemiconductorHitachi Semiconductor
PF01410AThe function is MOS FET Power Amplifier Module for GSM Handy Phone. Hitachi SemiconductorHitachi Semiconductor
PF01411The function is MOS FET Power Amplifier Module for E-GSM Handy Phone. Hitachi SemiconductorHitachi Semiconductor

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