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Datasheet PF0210-PDF.HTML Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
PF0 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | PF0010 | High Frequency Power MOS FET Module
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 Renesas Technology data | | |
| 2 | PF00105A | MOS FET Power Amplifier Module for AMPS Handy Phone PF00105A
MOS FET Power Amplifier Module for AMPS Handy Phone
ADE-208-447C (Z) 4th Edition February 1998 Features
• • • • • Low voltage operation : 4.6 V 2 stage amplifier : +8 dBm input Lead less small package : 0.2 cc High efficiency : 48% Typ at 1 W Low power control current : 500 µA T  Hitachi Semiconductor amplifier | | |
| 3 | PF0027 | MOS FET Power Amplifier Module Renesas Technology amplifier | | |
| 4 | PF0030 | MOS FET Power Amplifier PF0030 Series
MOS FET Power Amplifier
ADE-208-460 (Z) 1st Edition July 1996 Features
• High stability: Load VSWR = 20 : 1 • Low power control current: 400 µA • Thin package: 5 mmt
Ordering Information
Type No PF0030 PF0032 Operating Frequency 824 to 849 MHz 872 to 905 MHz Application AMPS E Hitachi Semiconductor amplifier | | |
| 5 | PF0031 | MOS FET Power Amplifier Module w
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at .D w
h FET Power Amplifier Module for Mobile Phone MOS S a
ADE-208-461 (Z) 1st Edition July 1, 1996
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PF0031
Application
PF0031: For NMT900 890 to 925 MHz
Features
• High stability: Load VSWR ≈ 20:1 • Low power control current: 400 µA • Thin package: 5 mm t
Pin  Hitachi amplifier | | |
| 6 | PF0032 | MOS FET Power Amplifier PF0030 Series
MOS FET Power Amplifier
ADE-208-460 (Z) 1st Edition July 1996 Features
• High stability: Load VSWR = 20 : 1 • Low power control current: 400 µA • Thin package: 5 mmt
Ordering Information
Type No PF0030 PF0032 Operating Frequency 824 to 849 MHz 872 to 905 MHz Application AMPS E Hitachi Semiconductor amplifier | | |
| 7 | PF0121 | MOS FET Power Amplifier Module for GSM Mobile Phone PF0121
MOS FET Power Amplifier Module for GSM Mobile Phone
ADE-208-097A (Z) 2nd Edition July 1996 Application
For GSM CLASS2 890 to 915 MHz
Features
• Low power control current: 0.9 mA Typ • High speed switching: 1.5 µsec Typ • Wide power control range: 100 dB Typ
Pin Arrangement
• RF-B2 Hitachi Semiconductor amplifier | |
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