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PH1214-300M fiches techniques PDF

Tyco Electronics - Radar Pulsed Power Transistor/ 300 Watts/1.20-1.40 GHz/ 150 mS Pulse/ 10% Duty

Numéro de référence PH1214-300M
Description Radar Pulsed Power Transistor/ 300 Watts/1.20-1.40 GHz/ 150 mS Pulse/ 10% Duty
Fabricant Tyco Electronics 
Logo Tyco Electronics 





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PH1214-300M fiche technique
Radar Pulsed Power Transistor, 300 Watts,
1.20-1.40 GHz, 150 µS Pulse, 10% Duty
12/06/01
Rev. 0
Features
Q NPN Silicon Microwave Power Transistor
Q Common Base Configuration
Q Broadband Class C Operation
Q High Efficiency Interdigitated Geometry
Q Gold Metalization System
Q Internal Input and Output Impedance Matching
Q Hermetic Metal/Ceramic Package
Outline Drawing
Absolute Maximum Ratings @ 25 °C
Parameter
Symbol
Collector-Emitter Voltage VCES
Rating
90
Emitter-Base Voltage
VEBO
3.0
Collector Current (Peak)
IC
21.0
Total Power Dissipation
@ +45 °C
Storage Temperature
PTOT
TSTG
620
-65 to +200
Junction Temperature
Tj
200
Units
V
V
A
W
°C
°C
Electrical Characteristics @ 25 °C
Parameter
Symbol Min. Max. Units
Test Conditions
Collector-Emitter Breakdown
Voltage
Collector-Emitter Leakage
Current
Thermal Resistance
BVCES
ICES
RTH(JC)
90 -
V IC=80 mA
- 10 mA VCE=40 V
- .25 °C/W VCC=40 V, Pin = 40 W, Freq= 1.2, 1.3 and 1.4 GHz
Output Power
PO 300 - W VCC=40 V, Pin = 40 W, Freq= 1.2, 1.3 and 1.4 GHz
Power Gain
GP
8.75
-
dB VCC=40 V, Pin = 40 W, Freq= 1.2, 1.3 and 1.4 GHz
Collector Efficiency
Input Return Loss
η
50 -
% VCC=40 V, Pin = 40 W, Freq= 1.2, 1.3 and 1.4 GHz
RL
10 -
dB VCC=40 V, Pin = 40 W, Freq= 1.2, 1.3 and 1.4 GHz
Load Mismatch Tolerance
VSWR-T
-
2:1
- VCC=40 V, Pin = 40 W, Freq= 1.2, 1.3 and 1.4 GHz
Load Mismatch Stability
VSWR-S - 1.5:1 - VCC=40 V, Pin = 40 W, Freq= 1.2, 1.3 and 1.4 GHz

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